Characterization of the framework of Cu doped TiO2 layers: An insight into optical, electrical and photodiode parameters

Yıldırım, Murat

doi:10.1016/j.jallcom.2018.09.276

Cited by 64 publications

(21 citation statements)

References 44 publications

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“…Although it is generally accepted that the decrease in the band gap energy is proportional to the increase in the photocurrent [10], the increase in the Cu content increases the photocurrent up to 313 µg in 1 g of TiO 2 particles; however, further increase in the Cu hardly affects the photocurrent. This phenomenon is in good agreement with the results reported by Yildirim [6].…”

Section: Resultssupporting

confidence: 93%

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Enhancement of Photoelectrochemical Cathodic Protection of Copper in Marine Condition by Cu-Doped TiO2

2020

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Photochemical cathodic protection (PEC) efficiency was enhanced by doping TiO2 with Cu (Cu/TiO2) through impregnation and reduction under hydrogen. The Cu loading was vaired from 0.1 to 1.0 mol% (0.1 Cu/TiO2, 0.5 Cu/TiO2, 1 Cu/TiO2). Then, up to 50 wt% Cu/TiO2 was mixed with TiO2 to form nanocomposite films. The film photocurrent and photopotential were measured under 1 mW/cm2 UV irradiation. The Cu/TiO2 film with 10 wt% of 0.5 Cu/TiO2 exhibited the highest photocurrent of 29.0 mA/g, which was three times higher than the TiO2 film. The underlying reason for the high photocurrent was the lower photopotential of film than the corrosion potential of copper for PEC. This film was also applied on copper terminal lug for anti-corrosion measurement by Tafel polarization in 3.5 wt% NaCl solution. The results showed that the photopotential of terminal lug coated with the film was −0.252 V vs. Ag/AgCl, which was lower than the corrosion potential of copper (−0.222 V vs. Ag/AgCl). Furthermore, the film can protect the corrosion of copper in the dark with 86.7% lower corrosion current (icorr) than that of bare copper.

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Section: Resultssupporting

confidence: 93%

“…The 5 mol% Cu-doped TiO 2 particles exhibited the maximum photocurrent, 0.16 mA, under 100 mW/cm 2 solar radiation intensity. Thus, Cu-doped TiO 2 is a good candidate for photodiode and photodetector application [6]. Up to today, Cu-doped TiO 2 has not been used as a coating material for anti-corrosion by PEC.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of Photoelectrochemical Cathodic Protection of Copper in Marine Condition by Cu-Doped TiO2

2020

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“…[8,73] This R value of 10% Li:TiO 2 /p-Si diode at under 30 mW cm À2 is higher than the photoresponsivity of TiO 2 nanowires (NWs)/poly(methyl methacrylate) (9.2 Â 10 À3 A W À1 in the UV region at 370 nm), [74] Al/p-Si/ coumarin:TiO 2 /Al (1.81 Â 10 À4 A W À1 under 100 mW cm À2 ), [61] and Al/n-Si/Cu x Ti 1 À x O 2 /Al (0.01 A W À1 under 100 mW cm À2 ) photodiodes. [27] Deb and Dhar [75] deposited TiO 2 NWs on graphene oxide (GO) by a glancing angle deposition technique. They reported the responsivity and photosensitivity of the fabricated Au/TiO2-NW/GO/Si device as 48.3 and 82.7 mA W À1 at 380 nm under 113.8 μW cm À2 light intensity, respectively.…”

Section: Electrical Properties Of Fabricated Photodiodesmentioning

confidence: 99%

The Optoelectrical Properties of Li: TiO₂/p‐Si Photodiodes for Various Li Doping

Rüzgar

2020

Physica Status Solidi (a)

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TiO 2 has received intense attention for optoelectronic applications due to its excellent properties, such as non-toxicity, low cost, and simple preparation. Herein, the influence of Li doping both on the structural and optical characteristics of TiO 2 thin films and on optoelectronic properties of TiO 2-based photodiodes is investigated. The root-mean-square (RMS) roughness values obtained from the atomic force microscopy (AFM) results and the optical bandgap energies calculated from the Tauc method vary between 3.40 and 24.53 nm and between 3.58 and 3.75 eV depending on the increase in Li doping, respectively. The ideality factor (n) values of the diodes, which provided information about the performance of diodes, are calculated between 5.92 and 9.74. The lowest n value of 5.92 is obtained for 2% Li-doped diode. All the fabricated diodes demonstrate a good photodiode behavior, and the maximum photoresponsivity value of 6.74 Â 10 À2 A W À1 is obtained for 10% Li:TiO 2. In addition, the C-V, G-V, and R s-V characteristics of diodes are examined for different frequencies. Li doping has improved the optoelectrical performance of the TiO 2-based photodiodes. Thus, the Li:TiO 2-based photodiode can be a candidate for optoelectronic applications.

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“…Sol-jel spin coating metot kullanılarak çeşitli Cu konsantrasyonlarında üretimi yapılmış CuxTi1-xO2 ince film numunelerin optik özellikleri incelenmiştir. Oda koşullarında farklı aydınlatma şiddetlerinde bulunan elektronik parametreler, tüm Al/n-Si/CuxTi1-xO2/Al fotodiyotlarının fototepki ve doğrultucu özelliklerinin optoelektronik çalışmalar için istenilen seviyede olduğunu doğrulamıştır [42].…”

Section: çEşitli Fotodiyotlarla İlgili Yapılan Literatür Araştırmasıunclassified

“…Al/n-Si/CuxTi1-xO2/Al fotodiyotu için en yüksek RR değeri % 0.05 Cu katkılı devre elamanı için 1.20×10 6 olarak bulunmuştur [42]. Aslan ve arkadaşları tarafından yapılan üç farklı çalışmada farklı coumarin konsantrasyonlarındaki üç farklı fotodiyotun RR değerleri hesaplanmıştır.…”

Section: Fotodiyotların Elektronik Parametrelerinin Karşılaştırılmasıunclassified

Analysis of The Electrical Characteristics of Photodiodes Produced by Dopping Various Metal Oxides

Aslan

Esen

Yakuphanoğlu

2020

International Journal of Innovative Engineering Applications

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Review paperIn this study, the studies made in the last 10 years about the devices produced by using different metal oxide nano powders were discussed extensively. The effects of the dopping on the electrical properties of photodiodes and photodetectors were investigated. The I-V characteristics of the devices performed under different light intensities were analyzed. In addition, the comparison of electronic parameters such as ideality factor (n), barrier height (Фb), series resistance (Rs) and interface state density (Dit) of the thin films produced was investigated. The effect of these parameters on devices is emphasized. In addition, it was investigated to what extent the optoelectronic properties of devices are compatible with the current literature.

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Characterization of the framework of Cu doped TiO2 layers: An insight into optical, electrical and photodiode parameters

Cited by 64 publications

References 44 publications

Enhancement of Photoelectrochemical Cathodic Protection of Copper in Marine Condition by Cu-Doped TiO2

Enhancement of Photoelectrochemical Cathodic Protection of Copper in Marine Condition by Cu-Doped TiO2

The Optoelectrical Properties of Li: TiO₂/p‐Si Photodiodes for Various Li Doping

Analysis of The Electrical Characteristics of Photodiodes Produced by Dopping Various Metal Oxides

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Characterization of the framework of Cu doped TiO2 layers: An insight into optical, electrical and photodiode parameters

Cited by 64 publications

References 44 publications

Enhancement of Photoelectrochemical Cathodic Protection of Copper in Marine Condition by Cu-Doped TiO2

Enhancement of Photoelectrochemical Cathodic Protection of Copper in Marine Condition by Cu-Doped TiO2

The Optoelectrical Properties of Li: TiO2/p‐Si Photodiodes for Various Li Doping

Analysis of The Electrical Characteristics of Photodiodes Produced by Dopping Various Metal Oxides

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The Optoelectrical Properties of Li: TiO₂/p‐Si Photodiodes for Various Li Doping