Characterization of the interface and the bulk phenomena in metal–SiO2–(n) GaAs structure by analysis of the equivalent circuit parameters at different temperatures

Impedance and barrier capacitance of silicon diodes implanted with high-energy Xe ions

“…Moreover, the dependence of the capacitance and the conductance on the frequency f, caused by recharging of the defects with deep levels in the band gap E g , may be taken into account (as it was done by the authors of Refs. [44][45][46][47] when studying metal-insulator-semiconductor structures), with the help of the so called constant phase element (CPE). The admittance Y of the constant phase element by definition [48] depends on the angular frequency x = 2pf as…”

The origin of constant phase element in equivalent circuit of MIS (n) GaAs structures

“…For analysis of MIS-GaAs systems it was proposed for the first time in the paper [25], wherein the authors attributed the CPE (with n = 0.53-0.57) to complex electron processes evoked by insulator-semiconductor interface states and calculated their time constants. A similar approach was applied in their later works as well [26][27][28]. It has been shown that impedance spectroscopy is a relatively simple as compared with other methods which employed very complex formulae to analyze experimental characteristics [29].…”