Characterization of the structural and optical properties of CuIn1−xGaxSe2 QJ;thin films by X-ray diffraction

Wu, Ya‐Fen; Hsu, Hung-Pin; Chen, Hung-Ing

doi:10.1016/j.jlumin.2013.03.046

Cited by 4 publications

(2 citation statements)

References 18 publications

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“…However, we notice that in other works [26], reported values are below 1.2 eV. In fact, the increase in direct band gap with change of gallium rate is studied by many investigators [27][28]. According to these researches, authors reported two main causes.…”

Section: Resultsmentioning

confidence: 82%

Physical properties of electrodeposited CIGS films on crystalline silicon: Application for photovoltaic hetero-junction

Saïdi

Alaya

Boujmil

et al. 2020

Current Applied Physics

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This is a PDF file of an article that has undergone enhancements after acceptance, such as the addition of a cover page and metadata, and formatting for readability, but it is not yet the definitive version of record. This version will undergo additional copyediting, typesetting and review before it is published in its final form, but we are providing this version to give early visibility of the article. Please note that, during the production process, errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain.

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Section: Resultsmentioning

confidence: 82%

Physical properties of electrodeposited CIGS films on crystalline silicon: Application for photovoltaic hetero-junction

Saïdi

Alaya

Boujmil

et al. 2020

Current Applied Physics

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“…For the sample with multiquantum barriers, the XRD linewidths were observed to broaden, indicating crystalline randomization and interface roughness of the sample. To determine the size distribution of nanocrystallites in our samples, the XRD spectra were analyzed using the Warren-Averbach method in Fourier space [30,31], and the calculation results are shown in Figure 5. We can see that the sample with multiquantum barriers exhibits a wider breadth of nanocrystallite size distribution.…”

Section: Resultsmentioning

confidence: 99%

Performance of Nanostructures within InGaN-Based Multiquantum-Well Light-Emitting Devices

Lee

2017

Applied Sciences

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Abstract:We introduced multiquantum-barrier (MQB) nanostructures into the barrier layers of InGaN/GaN multiquantum-well (MQW) heterostructures to improve the operation characteristics of the light-emitting devices. The electroluminescence (EL) spectra were examined over a broad range of temperatures for the samples. We observed inhibited carrier leakage for the sample with the MQB nanostructures. Greater inhomogeneity of nanocrystallite size and a stronger localization effect were also observed for the sample. To interpret this phenomenon, high-resolution X-ray diffraction curves were measured and analyzed using the Warren-Averbach model. External quantum efficiency as a function of temperature was also evaluated. The calculation results correspond with the inference the EL measurements provided. We determined that the performance of the light-emitting devices is enhanced by the MQB nanostructures within InGaN/GaN MQWs.

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Growth and study of CuIn1−xGaxSe2 chalcopyrite compounds for solar cell applications

et al. 2014

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Characterization of the structural and optical properties of CuIn1−xGaxSe2 QJ;thin films by X-ray diffraction

Cited by 4 publications

References 18 publications

Physical properties of electrodeposited CIGS films on crystalline silicon: Application for photovoltaic hetero-junction

Physical properties of electrodeposited CIGS films on crystalline silicon: Application for photovoltaic hetero-junction

Performance of Nanostructures within InGaN-Based Multiquantum-Well Light-Emitting Devices

Growth and study of CuIn1−xGaxSe2 chalcopyrite compounds for solar cell applications

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