Characterization of thermal and deposited thin oxide layers by longitudinal optical-transverse optical excitation in fourier transform IR transmission measurements

Lange, P. J. de; Windbracke, W.

doi:10.1016/0040-6090(89)90885-7

Cited by 32 publications

(21 citation statements)

References 14 publications

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“…Breswter angle involves rather a red-shifted with a peak located at 1160-1170 cm -1 [47,53]. Such investigation of the disorder effect on IR absorption spectra in the a-SiO 2 host matrix and found that the interpretation of the IR spectra is somewhat in contradiction with an independentoscillator model [47].…”

Section: Mode Undermentioning

confidence: 94%

Structural and emission properties of Tb³⁺-doped nitrogen-rich silicon oxynitride films

Labbé¹,

An²,

Zatryb³

et al. 2017

Nanotechnology

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Terbium doped silicon oxynitride host matrix is suitable for various applications such as light emitters compatible with CMOS technology or frequency converter systems for photovoltaic cells. In this study, amorphous Tb ion doped nitrogen-rich silicon oxynitride (NRSON) thin films were fabricated using a reactive magnetron co-sputtering method, with various N flows and annealing conditions, in order to study their structural and emission properties. Rutherford backscattering (RBS) measurements and refractive index values confirmed the silicon oxynitride nature of the films. An electron microscopy analysis conducted for different annealing temperatures (T ) was also performed up to 1200 °C. Transmission electron microscopy (TEM) images revealed two different sublayers. The top layer showed porosities coming from a degassing of oxygen during deposition and annealing, while in the region close to the substrate, a multilayer-like structure of SiO and SiN phases appeared, involving a spinodal decomposition. Upon a 1200 °C annealing treatment, a significant density of Tb clusters was detected, indicating a higher thermal threshold of rare earth (RE) clusterization in comparison to the silicon oxide matrix. With an opposite variation of the N flow during the deposition, the nitrogen excess parameter (N) estimated by RBS measurements was introduced to investigate the Fourier transform infrared (FTIR) spectrum behavior and emission properties. Different vibration modes of the Si-N and Si-O bonds have been carefully identified from the FTIR spectra characterizing such host matrices, especially the 'out-of-phase' stretching vibration mode of the Si-O bond. The highest Tb photoluminescence (PL) intensity was obtained by optimizing the N incorporation and the annealing conditions. In addition, according to these conditions, the integrated PL intensity variation confirmed that the silicon nitride-based host matrix had a higher thermal threshold of rare earth clusterization than its silicon oxide counterpart. Analysis of time-resolved PL intensity versus T showed the impact of Tb clustering on decay times, in agreement with the TEM observations. Finally, PL and PL excitation (PLE) experiments and comparison of the related spectra between undoped and Tb-doped samples were carried out to investigate the impact of the band tails on the excitation mechanism of Tb ions.

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Section: Mode Undermentioning

confidence: 94%

Structural and emission properties of Tb³⁺-doped nitrogen-rich silicon oxynitride films

Labbé¹,

An²,

Zatryb³

et al. 2017

Nanotechnology

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“…By applying an oblique incidence of the infrared beam on the sample, the interaction of the electromagnetic field with the film is enhanced and the asymmetric stretching mode is split into two com ponents [54], the transverse optical excitation (TO) and the long itudinal optical one (LO), the latter called the Berreman effect [55,56]. Fig.…”

Section: To 3 Lo 3 Splittingmentioning

confidence: 99%

Investigation of the densification mechanisms and corrosion resistance of amorphous silica films

Ponton

Dhainaut

Vergnes

et al. 2019

Journal of Non-Crystalline Solids

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“…There is, however, a small difference (Fig. 5b) , and silicon alkoxides (Si-OR) groups, and therefore the new peak could be due to the formation of a Si containing on species on LMFP after SiF 4 treatment [32][33][34]. There is also a strong possibility that Si-OR formation occurred with the functional groups present on the disordered carbon of LMFP cathode.…”

Section: Resultsmentioning

confidence: 98%

Improvement in hydrophobicity of olivine lithium manganese iron phosphate cathodes by SiF4 treatment for lithium-ion batteries

Theivanayagam

Ziebarth

et al. 2015

Solid State Ionics

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Characterization of thermal and deposited thin oxide layers by longitudinal optical-transverse optical excitation in fourier transform IR transmission measurements

Cited by 32 publications

References 14 publications

Structural and emission properties of Tb³⁺-doped nitrogen-rich silicon oxynitride films

Structural and emission properties of Tb³⁺-doped nitrogen-rich silicon oxynitride films

Investigation of the densification mechanisms and corrosion resistance of amorphous silica films

Improvement in hydrophobicity of olivine lithium manganese iron phosphate cathodes by SiF4 treatment for lithium-ion batteries

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Characterization of thermal and deposited thin oxide layers by longitudinal optical-transverse optical excitation in fourier transform IR transmission measurements

Cited by 32 publications

References 14 publications

Structural and emission properties of Tb3+-doped nitrogen-rich silicon oxynitride films

Structural and emission properties of Tb3+-doped nitrogen-rich silicon oxynitride films

Investigation of the densification mechanisms and corrosion resistance of amorphous silica films

Improvement in hydrophobicity of olivine lithium manganese iron phosphate cathodes by SiF4 treatment for lithium-ion batteries

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Structural and emission properties of Tb³⁺-doped nitrogen-rich silicon oxynitride films

Structural and emission properties of Tb³⁺-doped nitrogen-rich silicon oxynitride films