Characterization of thin indium tin oxide films deposited by pulsed XeCl laser ablation

Abstract

Thin (6-320 nm) indium tin oxide films were deposited by pulsed excimer (XeCl) laser ablation. The lowest electrical resistivity (1.6×10-6 Ω m) was measured for samples deposited on moderately heated (200 °C) glass substrates. Optical transmissivity of the films in the range 400-1200 nm is higher than 80%. Ultra-thin (~6-9 nm) films were deposited and successfully used as transparent electrodes in optoelectronic devices.