Characterization of tin(II) sulfide defects/vacancies and correlation with their photocurrent

Li, Mingyang; Wang, Luqing; Zhou, Linan; Lei, Sidong; Joyner, Jarin; Yang, Yingchao; Vajtai, Róbert; Ajayan, Pulickel M.; Yakobson, Boris I.; Spanos, Pol D.

doi:10.1007/s12274-016-1279-3

Cited by 8 publications

(1 citation statement)

References 52 publications

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“…Due to the efficient interfacial coupling between SnS nanoflakes and graphene, the high carrier mobility of graphene, and the smaller channel length, light-excited holes will be quickly transferred to graphene and then cycled many times during the limited lifetime of electrons, thereby generating photocurrent. However, there will inevitably be some local defects in the SnS nanoflakes, such as tin vacancy [53]. Figure S12 (Supplementary Materials) shows the EDS results of the SnS nanoflakes, indicating a slight tin defect.…”

Section: Resultsmentioning

confidence: 99%

SnS Nanoflakes/Graphene Hybrid: Towards Broadband Spectral Response and Fast Photoresponse

Ruan

Zhu

2022

Nanomaterials

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High responsivity has been recently achieved in a graphene-based hybrid photogating mechanism photodetector using two-dimensional (2D) semiconductor nanosheets or quantum dots (QDs) sensitizers. However, there is a major challenge of obtaining photodetectors of fast photoresponse time and broad spectral photoresponse at room temperature due to the high trap density generated at the interface of nanostructure/graphene or the large band gap of QDs. The van der Waals interfacial coupling in small bandgap 2D/graphene heterostructures has enabled broadband photodetection. However, most of the photocarriers in the hybrid structure originate from the photoconductive effect, and it is still a challenge to achieve fast photodetection. Here, we directly grow SnS nanoflakes on graphene by the physical vapor deposition (PVD) method, which can avoid contamination between SnS absorbing layer and graphene and also ensures the high quality and low trap density of SnS. The results demonstrate the extended broad-spectrum photoresponse of the photodetector over a wide spectral range from 375 nm to 1550 nm. The broadband photodetecting mechanisms based on a photogating effect induced by the transferring of photo-induced carrier and photo-hot carrier are discussed in detail. More interestingly, the device also exhibits a large photoresponsivity of 41.3 AW−1 and a fast response time of around 19 ms at 1550 nm. This study reveals strategies for broadband response and sensitive photodetectors with SnS nanoflakes/graphene.

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Section: Resultsmentioning

confidence: 99%

SnS Nanoflakes/Graphene Hybrid: Towards Broadband Spectral Response and Fast Photoresponse

Ruan

Zhu

2022

Nanomaterials

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Few‐Layer Tin Sulfide: A Promising Black‐Phosphorus‐Analogue 2D Material with Exceptionally Large Nonlinear Optical Response, High Stability, and Applications in All‐Optical Switching and Wavelength Conversion

Xie

et al. 2017

Advanced Optical Materials

225

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for exploring 2D materials. In the past decade, studies have been extensively reported [2] on diverse optical devices such as absorbers, modulators, detectors, etc. Liu et al. [3] experimentally demonstrated a broadband, high-speed and waveguideintegrated electroabsorption modulator based on monolayer graphene. Vicarelli et al. [4] applied graphene field-effect transistors as room-temperature terahertz detectors. In addition, light/graphene interactions have also been extensively investigated, and graphene shows saturation of the optical absorption, THz emission, SHG under symmetry breakage, and third-order nonlinear refraction. The nonlinear refractive index (n 2 ) and third-order nonlinear susceptibility (χ (3) ) in graphene have been experimentally investigated by four-wave mixing and Z-scan measurements. [5] Furthermore, another measurement technique based on spatial self-phase modulation (SSPM) has been employed to analyze the nonlinear optical responses of different types of nanomaterials. In 2011, Wu et al. investigated the third-order nonlinear susceptibility in chemically exfoliated graphene nanosheets using the SSPM method. [6] Since the discovery of single-layer graphene, much effort has been devoted toward finding new 2D nonlinear optical materials As an analogue compound of black phosphorus, a new 2D semiconducting few-layer SnS is successfully synthesized, and its nonlinear optical response is investigated. It is shown that its nonlinear refractive index and third-order nonlinear susceptibility are measured as n 2 ≈ 10 −5 (cm 2 W −1 ) and monolayer (3) χ χ ≈ 10 −10 (e.s.u.), respectively. By taking advantage of such a large Kerr nonlinearity, an all-optical switching technique based on few-layer SnS is realized through modulating the propagation of the signal beam by another controlling beam. The achievement of all-optical switching indicates that few-layer SnS could be developed as an excellent optical material for alloptical signal processing. More importantly, a conceptually new and reliable information conversion system based on spatial cross-phase modulation in few-layer SnS, that is, the transmission and conversion of a sequence of bit information from one wavelength channel to the other, is presented. The contributions reveal potential applications of few-layer SnS as a new type of optical information material, and it is therefore anticipated that SnS and other IV-VI compound-based 2D nanomaterials could find promising applications in photonic devices such as optical modulators, optical switches, detectors, etc.

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Correlation between types of defects/vacancies of Bi2S3 nanostructures and their transient photocurrent

Wang

Dong

et al. 2017

Nano Res.

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Characterization of tin(II) sulfide defects/vacancies and correlation with their photocurrent

Cited by 8 publications

References 52 publications

SnS Nanoflakes/Graphene Hybrid: Towards Broadband Spectral Response and Fast Photoresponse

SnS Nanoflakes/Graphene Hybrid: Towards Broadband Spectral Response and Fast Photoresponse

Few‐Layer Tin Sulfide: A Promising Black‐Phosphorus‐Analogue 2D Material with Exceptionally Large Nonlinear Optical Response, High Stability, and Applications in All‐Optical Switching and Wavelength Conversion

Correlation between types of defects/vacancies of Bi2S3 nanostructures and their transient photocurrent

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