Characterization of TiN Oxide Doping Antimony Thin Layer with Sol- Gel Spin Coating Method for Electronic Device

Mahardika

et al. 2022

J. Phys.: Conf. Ser.

Research has been carried out in the form of the synthesis of a thin film of Titanium Dioxide with a mixture of Fluorine and Indium doping. The purpose of this research is to obtain the characteristics of a thin filmphotocatalyst with a crystal structure and optical properties that can be applied to solar cell components. This research was carried out in two stages, namely the synthesis stage and the thin filmcharacterization stage. The TiO2 thin film synthesis stage is through the substrate preparation process, sol-gel solution preparation, thin film deposition, and heating process, while the thin-film characterization stage uses X-Rays Diffraction (XRD) to identify crystal properties and UV-VisSpectrophotometer to determine optical properties of a thin film of TiO2 and TiO2:(F+In). Based on data analysis and discussion, XRD test results showed that the thin film of TiO2:(F+In) has an Anatase phase with a tetragonal shape, and has an average crystal size that is getting smaller from 23.14 to 12.17 nm. Based on the results of research, data analysis, and discussion, it was found that the sample of TiO2 : (F+In) has characteristics that can be used as materials in the development of solar cell components. These characteristics are like 1). havenano-sized particles, 2). have a low transmittance value and high absorbance in absorbing sunlight, and 3). have a low activation energy and energy gap (direct and indirect).

Section: Resultsmentioning

confidence: 99%

Structure and optical properties of Titanium Dioxide thin film with mixed Fluorine and Indium doping for solar cell components

Mahardika

et al. 2022

J. Phys.: Conf. Ser.

“…This shows that the addition of aluminum, fluorine and indium doping can cause a decrease in the value of the bandgap thin film that were founded from sloope of graph photon energy versus (𝛼𝛼ℎ𝜐𝜐) 𝑛𝑛 . This means that the smaller the percentage of doping aluminum, fluorine, and indium energy bandgap produced the greater [24,25]. The decrease in the bandgap energy value indicates that the electron jump from the valence band to the conduction band will be easier.…”

Section: Resultsmentioning

confidence: 99%

The Optical Properties of Thin Films Tin Oxide with Triple Doping (Aluminum, Indium, and Fluorine) for Electronic Device

Taufik

et al. 2021

SSP

Self Cite

Tin oxide (SnO2) thin film is a form of modification of semiconductor material in nanosize. The thin film study aims to analyze the effect of triple doping (Aluminum, Indium, and Fluorine) on the optical properties of SnO2: (Al + In + F) thin films. Aluminum, Indium, and Fluorine as doping SnO2 with a mass percentage of 0, 5, 10, 15, 20, and 25% of the total thin-film material. The addition of Al, In, and F doping causes the thin film to change optical properties, namely the transmittance and absorbance values changing. The transmittance value is 67.50, 73.00, 82.30, 87.30, 94.6, and 99.80 which is at a wavelength of 350 nm for the lowest to the highest doping percentage, respectively. The absorbance value increased with increasing doping percentage at 300 nm wavelength of 0.52, 0.76, 0.97, 1.05, 1.23, and 1.29 for 0, 5, 10, 15, 20, and 25% doping percentages, respectively. The absorbance value is then used to find the gap energy of the SnO2: (Al + In + F) thin film of the lowest doping percentage to the highest level i.e. 3.60, 3.55, 3.51, 3.47, 3.42, and 3.41 eV. Thin-film activation energy also decreased with values of 2.27, 2.04, 1.85, 1.78, 1.72, and 1.51 eV, respectively for an increasing percentage of doping. The thin-film SnO2: (Al + In + F) which experiences a gap energy reduction and activation energy makes the thin film more conductive because electron mobility from the valence band to the conduction band requires less energy and faster electron movement as a result of the addition of doping.

“…The energy value of the band gap for temperature variation for the percentage of 75: 25% (Figure 7b) is 3.57, 3.54, 3.48, 3.43, and 3.31 eV for direct allowed, respectively, while for indirect allowed the amount is 3.65, 3.62, 3.60, 3.57, respectively and 3.54 eV. The energy band gap obtained decreases with increasing ripening temperature and increasing the doping percentage of aluminum, fluorine, and indium [18,19].…”

Section: Bandgap Energymentioning

confidence: 90%

The Effect of Temperature Variations on the Optical Properties of Tin Oxide Film with Doping Aluminum, Fluorine and Indium for Semiconductor Electronic Devices

Taufik

2021

MSF

Self Cite

The manufacture of a thin layer of SnO2: (Al + F + In) was carried out by using the sol-gel spin coating method on a glass substrate with various temperatures (25, 50, 100, 150, and 200 °C).The purpose of this study is to determine the optical properties of thin layers which include transmittance, absorbance, band gap energy and activation energy. The optical properties of the coating were characterized using a UV-Vis spectrophotometer with a wavelength of 200-1100 nm. The results showed that the absorbance value increased with increasing temperature at a wavelength of 300 nm. The absorbance values obtained for temperature variations were in the percentages of 95: 5% and 75: 25%, respectively 3.46-4.50 and 3.96-5.76. The transmittance value obtained increased, namely 73.00-86.30% and 74.20-99.30%. In addition, the energy band gap decreased from 3.60-3.41 eV and 3.57-3.31 eV for direct allowed, while 3.69-3.58 eV and 3.65-3.54 eV for indirect allowed. Activation energy decreased from 2.00-1.18 eV and 1.60-1.12 eV. In general, the absorbance and transmittance values increase with increasing ripening temperature and the addition of doping aluminum, fluorine, and indium, while the bandgap energy and activation energy values obtained decrease with increasing ripening temperature and increasing the doping percentage of aluminum, fluorine, and indium. The decrease in the value of the bandgap energy and the activation energy can make it easier for electrons to move from the valence band to the conduction band so that the material is slightly conductive and acts as a semiconductor.