Characterization of transparent conductive oxide films and their effect on amorphous/crystalline silicon heterojunction solar cells

Meng, Fanying; Shi, Jing; Shen, Lei; Zhang, Liping; Liu, Jinning; Liu, Yucheng; Yu, Jian; Bao, Jian; Liu, Zhengxin

doi:10.7567/jjap.56.04cs09

Cited by 25 publications

(12 citation statements)

References 24 publications

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“…However, indium oxide-based materials with properties outperforming conventional ITO have been discovered and extensively studied in the past years. Here, the usage of other metal dopants (e.g., Zr, W, Ti, and Mo 5,[8][9][10][11][12] ) than tin and/or the incorporation of hydrogen [13][14][15] resulted in enlarged electron mobility (μ), being an important parameter for the conductivity-transparency trade-off.…”

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confidence: 99%

The sputter deposition of broadband transparent and highly conductive cerium and hydrogen co‐doped indium oxide and its transfer to silicon heterojunction solar cells

Tutsch

Sai

Matsui

et al. 2021

Progress in Photovoltaics

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Indium oxide doped with tin (ITO) is the most commonly used material for lateral transport window layers in silicon heterojunction (SHJ) solar cells, as it currently offers the best combination of physical properties, industrial deposition capability, and module reliability. However, typically applied ITO layers by far do not exploit the full electro-optical potential of the indium oxide material class, resulting in optical and electrical losses limiting the solar cell efficiency. In this work, cerium and hydrogen co-doped indium oxide thin films are developed for their application as high-performance transparent conductive oxide layers in SHJ devices. Amorphous In 2 O 3 :Ce,H layers are fabricated via radio frequency magnetron sputtering, before being crystallized during post-deposition thermal treatments compatible with the SHJ temperature stability. The resulting excellent electro-optical film properties are on par with values so far solely reported for reactive plasma deposited films. It is shown that the surface morphology of the substrate (planar or textured) has a strong impact on the film properties, and further, the critical role of the atmosphere present during post-deposition annealing is elucidated. Finally, the large potential of an optimally processed In 2 O 3 :Ce,H window layer in SHJ cells is demonstrated, quantified by a gain in short circuit current density of 0.6 mA/cm 2 without impairing the resistive losses in comparison to the usage of a baseline ITO layer.

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confidence: 99%

The sputter deposition of broadband transparent and highly conductive cerium and hydrogen co‐doped indium oxide and its transfer to silicon heterojunction solar cells

Tutsch

Sai

Matsui

et al. 2021

Progress in Photovoltaics

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“…[ 19 ] Meng et al were the only one using ITiO as electrodes in SHJ solar cells, but details about film development or deposition parameters affecting solar cell performance were not presented. [ 23 ] So far, a disclosure of low‐temperature sputtered ITiO thin films and their application in SHJ solar cells is missing.…”

Section: Introductionmentioning

confidence: 99%

Influence of Oxygen on Sputtered Titanium‐Doped Indium Oxide Thin Films and Their Application in Silicon Heterojunction Solar Cells

et al. 2020

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Considering the increasing global energy demand, solar cells that directly convert light into electricity offer a realistic and sustainable solution to the challenge of providing renewable energy. Improving energy conversion efficiency (η) and reducing the fabrication cost are two main directions to promote the application of c-Si solar cells. As one of the most promising solar cell structures, silicon heterojunction (SHJ) solar cells provide a promising solution for mass production due to their excellent device performance with a small temperature coefficient. [1-4] A well-known advantage of SHJ solar cells is the high open-circuit voltage (V oc), which can be achieved by the suppression of minority carrier recombination at the surface of c-Si with hydrogenated amorphous silicon (a-Si:H) passivation layers. [5,6] For a highefficiency solar cell, not only a high V oc but also a high fill factor (FF) and a high short-circuit current density (J sc) are mandatory. In SHJ solar cells, the role of transparent conductive oxide (TCO) layers is to collect charge carriers separated by the p-n junction and to act as an antireflection coating that allows more light to be absorbed in the silicon wafer for current generation. [7-9] These two aspects directly affect FF and J sc , respectively.

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“…In order to enhance the light utilization and improve the short‐circuit current for bifacial SHJ solar cell, novel transparent conductive oxide (TCO) film materials such as hydrogen‐doped indium oxide (IO:H) film, cerium oxide and hydrogen co‐doped indium oxide film, tungsten‐doped indium oxide film, titanium‐doped indium oxide film have been developed. Other than transparent conductive film material, double anti‐reflective structure has been proposed for increasing light transmittance .…”

Section: Introductionmentioning

confidence: 99%

Dual‐Function Light‐Trapping: Selective Plating Mask of SiO_x/SiN_x Stacks for Silicon Heterojunction Solar Cells

Zhang

Chen

et al. 2019

Solar RRL

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Reducing the production cost of highly efficient silicon heterojunction (SHJ) solar cells is essential for their large‐scale commercialization. Replacing screen printed silver contacts with plated copper is an effective way. However, one needs to deal with the process compatibility without sacrificing the cell performance. In this work, a layer stack of silicon oxide and silicon nitride (SiOx/SiNx) is proposed, serving dual functions of light‐trapping and selective copper plating mask. The SiOx/SiNx stack is prepared by plasma enhanced chemical vapor deposition (PECVD) on a tungsten doped indium oxide (IWO) layer. Optimized SiOx/SiNx/IWO stacks in SHJ solar cells with silver contacts result in excellent anti‐reflection properties and improved external quantum efficiency. A short circuit current density gain of 1.16 mA cm−2 is achieved without the loss in fill factor. This SiOx/SiNx stack is tested as in‐situ deposited selective plating mask for a front‐side copper plating process. An in‐house made light induced plating tool is utilized. A screen printed silver finger is applied as a seed layer for copper plating. The bulk resistivity of Cu/Ag finger reduces to 4.1 E‐6 Ω · cm, which is lower than that of low temperature silver paste (around 6 E‐6 Ω · cm) before copper is plated on it. The dual functions of SiOx/SiNx stack and the process are proven, indicating a good potential for further improving photoelectric properties of SHJ solar cells after well optimization.

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Characterization of transparent conductive oxide films and their effect on amorphous/crystalline silicon heterojunction solar cells

Cited by 25 publications

References 24 publications

The sputter deposition of broadband transparent and highly conductive cerium and hydrogen co‐doped indium oxide and its transfer to silicon heterojunction solar cells

The sputter deposition of broadband transparent and highly conductive cerium and hydrogen co‐doped indium oxide and its transfer to silicon heterojunction solar cells

Influence of Oxygen on Sputtered Titanium‐Doped Indium Oxide Thin Films and Their Application in Silicon Heterojunction Solar Cells

Dual‐Function Light‐Trapping: Selective Plating Mask of SiO_x/SiN_x Stacks for Silicon Heterojunction Solar Cells

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Characterization of transparent conductive oxide films and their effect on amorphous/crystalline silicon heterojunction solar cells

Cited by 25 publications

References 24 publications

The sputter deposition of broadband transparent and highly conductive cerium and hydrogen co‐doped indium oxide and its transfer to silicon heterojunction solar cells

The sputter deposition of broadband transparent and highly conductive cerium and hydrogen co‐doped indium oxide and its transfer to silicon heterojunction solar cells

Influence of Oxygen on Sputtered Titanium‐Doped Indium Oxide Thin Films and Their Application in Silicon Heterojunction Solar Cells

Dual‐Function Light‐Trapping: Selective Plating Mask of SiOx/SiNx Stacks for Silicon Heterojunction Solar Cells

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Dual‐Function Light‐Trapping: Selective Plating Mask of SiO_x/SiN_x Stacks for Silicon Heterojunction Solar Cells