Characterization of ultra-thin nickel–silicide films synthesized using the solid state reaction of Ni with an underlying Si:P substrate (P: 0.7 to 4.0%)

Peter, A.; Yu, Hao; Dutta, Shibesh; Rosseel, Erik; Elshocht, Sven Van; Paulussen, Kris; Moussa, Alain; Vaesan, Inge; Schaekers, Marc

doi:10.1016/j.mee.2016.02.049

Cited by 10 publications

(6 citation statements)

References 42 publications

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“…Advanced TiSix MS contact with ultralow pe As discussed in the previous section, apart from the ultralow pe, another criteria to screen the contact metal is the contact stability. For instance, although NiSix [4], [43] or NiGex [23], [25] with ultralow pe have been demonstrated, the fast diffusion ofNi in Si or Ge creates precipitate defects and induces concerns of device reliability [44], [45]. Therefore, Ni has been gradually superseded in modern CMOS, Currently Ti becomes the prevailing contact metal in modern CMOS [1], [11], [29].…”

Section: B Thermal Stability Problem Of Mls On N-type Semiconductormentioning

confidence: 99%

MIS or MS? Source/drain contact scheme evaluation for 7nm Si CMOS technology and beyond

Schaekers

Demuynck

et al. 2016

2016 16th International Workshop on Junction Technology (IWJT)

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Contact resistance at the transistor source/drain becomes a bottleneck for modern Si CMOS technology. To seek for contact solutions, this paper compares metal-insulator-semiconductor (MIS) contacts and metal-semiconductor (MS) direct contacts in terms of contact resistivity and CMOS compatibility. On p-type substrates, due to the favorable surface Fermi level pinning, MS contact has absolute advantage over MIS. On n-type substrates, on the one hand, we find MIS contacts have relatively high contact resistivity despite the low Schottky barrier height; the low thermal stability of MIS is also worrying. On the other hand, with MS contacts, we use a pre-amorphization based Ti silicidation technique and achieve contact resistivity of 1.5xl0-9 n·cm 2 • Therefore, for both NMOS and PMOS, we confirm that MS contacts are still the prevailing contact scheme. Advanced MS interface engineering is able to help reach the target contact resistivity required by advanced CMOS technology.

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Section: B Thermal Stability Problem Of Mls On N-type Semiconductormentioning

confidence: 99%

MIS or MS? Source/drain contact scheme evaluation for 7nm Si CMOS technology and beyond

Schaekers

Demuynck

et al. 2016

2016 16th International Workshop on Junction Technology (IWJT)

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“…In recent years, the formation of silicides on P‐rich ISPD substrates has been extensively investigated and has been shown to result in a change of as‐formed silicide texture or an increase of the silicide formation temperature. However, such studies have only been performed for Ni and Er silicides . In contrast, the formation of Ti silicide on P‐rich ISPD substrates has not been explored, although this silicide is an attractive material for achieving low contact resistance ( R c ).…”

Section: Introductionmentioning

confidence: 99%

“…In contrast, the formation of Ti silicide on P‐rich ISPD substrates has not been explored, although this silicide is an attractive material for achieving low contact resistance ( R c ). In addition, previous studies did not sufficiently describe the electrical properties of silicides or were performed at specific concentrations …”

Section: Introductionmentioning

confidence: 99%

Effect of P Concentration on Ti Silicide Formation in In‐Situ P Doped Epitaxial Si Films

Park

2019

Physica Status Solidi (a)

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Herein, the effect of P concentration in highly P‐doped epitaxial Si films on the formation of Ti silicide therein are investigated. Ti films sputter‐deposited on P‐doped Si substrates are annealed at different temperatures, and the thus obtained samples are characterized by X‐ray diffraction (XRD) and transmission electron microscopy. The former technique revealed that the formation of C54 is suppressed by high P concentrations, while the resistivity of Ti silicide are shown to be independent of P concentration when the C54 phase is fully formed under the condition of sufficient thermal budget. Most importantly, this work confirms the occurrence of a silicidation delay in in situ P‐doped epitaxial Si films and demonstrates that this delay increases the temperature of the C49 to C54 phase transition of Ti silicide.

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“…Many technically important alloys such as steels, Cu alloys and high T c superconductors display peritectic reactions in which phase and microstructure selection is very important for the processing and the properties of the material. Solidification of peritectic alloy Ni-Si has been the topic of several recent investigations [6][7][8][9]. Some studies particularly focus on phase and microstructure selection in peritectic alloys [10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Effect of phosphorus on the peritectic reaction in Ni-60wt.%Si alloys

Wu¹

2018

Nanomaterials, Functional and Composite Materials

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Abstract. Effect of phosphorus on the solidification process of Ni-60wt.%Si alloys was studied in this paper, and the microstructure transformation was investigated by using Electron Probe Micro-analyzer (EPMA, JXA-8840) and Differential Scanning Calorimeter (DSC, NETZSCH 404). It is found that the peritectic reaction in Ni-60wt.%Si alloys would be suppressed by the addition of phosphorus. Another interesting discovery is that the addition of phosphorus can not only suppress the peritectic reaction, but also promote the eutectic reaction (L(l) NiSi(s)+NiSi 2 (s)) in Ni-60wt.%Si alloys.

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Characterization of ultra-thin nickel–silicide films synthesized using the solid state reaction of Ni with an underlying Si:P substrate (P: 0.7 to 4.0%)

Cited by 10 publications

References 42 publications

MIS or MS? Source/drain contact scheme evaluation for 7nm Si CMOS technology and beyond

MIS or MS? Source/drain contact scheme evaluation for 7nm Si CMOS technology and beyond

Effect of P Concentration on Ti Silicide Formation in In‐Situ P Doped Epitaxial Si Films

Effect of phosphorus on the peritectic reaction in Ni-60wt.%Si alloys

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