Characterization of ultra thin oxynitrides: A general approach

The outstanding properties of SiO 2 , which include high resistivity, excellent dielectric strength, a large band gap, a high melting point, and a native, low defect density interface with Si, are in large part responsible for enabling the microelectronics revolution. The Si/SiO 2 interface, which forms the heart of the modern metal-oxide-semiconductor field effect transistor, the building block of the integrated circuit, is arguably the worlds most economically and technologically important materials interface. This article summarizes recent progress and current scientific understanding of ultrathin ͑Ͻ4 nm͒ SiO 2 and Si-ON ͑silicon oxynitride͒ gate dielectrics on Si based devices. We will emphasize an understanding of the limits of these gate dielectrics, i.e., how their continuously shrinking thickness, dictated by integrated circuit device scaling, results in physical and electrical property changes that impose limits on their usefulness. We observe, in conclusion, that although Si microelectronic devices will be manufactured with SiO 2 and Si-ON for the foreseeable future, continued scaling of integrated circuit devices, essentially the continued adherence to Moore's law, will necessitate the introduction of an alternate gate dielectric once the SiO 2 gate dielectric thickness approaches ϳ1.2 nm. It is hoped that this article will prove useful to members of the silicon microelectronics community, newcomers to the gate dielectrics field, practitioners in allied fields, and graduate students. Parts of this article have been adapted from earlier articles by the authors ͓L.

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“…Habraken and colleagues examined N, O, Si, and H using ERD of primary MeV ions. 37,225 More recently, Brijs 242 241 is shown in Fig. 30.…”

Section: Ion Beam Analysismentioning

confidence: 95%

Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

Green¹,

Gusev

Degraeve

et al. 2001

Journal of Applied Physics

748

345

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“…The same oxynitride sample was also analysed in a small round-robin study with different techniques: lowenergy dynamic SIMS, XPS, HRBS (High resolution Rutherford Backscattering Spectrometry), HERD (High resolution Elastic Recoil Detection), etc. 5,10,17 Based on this study and the intensity (corrected area), mass resolution (MR) and interference (Table 1) of the different nitrogen clusters in our ToF-SIMS profile (Fig. 1), we concluded that the Si 2 N C signal corresponds to the observation of HERD, where nitrogen was clearly detected at the interface.…”

Section: Selection Of Nitrogen Clusters and Interface Determinationmentioning

confidence: 68%

SIMS analysis of oxynitrides: evidence for nitrogen diffusion induced by oxygen flooding

Witte

Conard

Vandervorst

et al. 2000

Surf. Interface Anal.

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“…The most commonly known are: Transmission Electron Microscopy (TEM) combined with electron dispersive spectroscopy and/or Electron Energy Loss Spectroscopy (EELS) [11]; nuclear techniques such as highresolution Rutherford Backscattering Spectrometry (HR-RBS) [12], Medium Energy Ion Scattering (MEIS) [13] or Elastic Recoil Detection (ERD) [14]; Time-of-Flight (TOF), Secondary Ion Mass Spectroscopy (SIMS) [15] and Angle-Resolved X-ray Photoelectron Spectroscopy (ARXPS) [12,[16][17][18].…”

Section: Theory Concerning Measurement Of Nanolayer Thicknessmentioning

confidence: 99%

Measurement of Silver Nanolayer Absorption by the Body in an in Vivo Model of Inflammatory Gastrointestinal Diseases

Siczek¹,

Pawlak²,

Zatorski³

et al. 2016

Metrology and Measurement Systems

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Layers of silver particles are used in the studies on pathophysiology and treatment of diseases, both in pre-clinical and clinical conditions. Silver layers can be formed using different techniques and on different substrates. Deposition by magnetron sputtering on glass beads was used in this study. Silver absorption by the body was estimated by calculating the difference in thickness of the silver nanolayer deposited on a bead and measured before and after application of the bead in an animal model of gastrointestinal inflammation. Recommendations for the minimal thickness of silver nanolayer deposited on glass beads were worked out for further studies.Keywords: silver nanolayer, measurement of layer thickness, in vivo animal model.

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Characterization of ultra thin oxynitrides: A general approach

Cited by 21 publications

References 14 publications

Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

SIMS analysis of oxynitrides: evidence for nitrogen diffusion induced by oxygen flooding

Measurement of Silver Nanolayer Absorption by the Body in an in Vivo Model of Inflammatory Gastrointestinal Diseases

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Characterization of ultra thin oxynitrides: A general approach

Cited by 21 publications

References 14 publications

Ultrathin (&lt;4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

Ultrathin (&lt;4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

SIMS analysis of oxynitrides: evidence for nitrogen diffusion induced by oxygen flooding

Measurement of Silver Nanolayer Absorption by the Body in an in Vivo Model of Inflammatory Gastrointestinal Diseases

Contact Info

Product

Resources

About

Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits