Characterization of W Defects in Electron-Irradiated InP

Abstract

The formation of new metastable W defects is observed in the depletion region of n‐InP when a reverse bias is applied to Schottky diodes during bombardment at RT. Two configurations of W defects are found: the A configuration with inverted negative order for levels (first ionization event − 0.7 eV; second at − 0.03 eV following immediately) and the B configuration (peaks W1 to W3) are detected after cooling from 410 to 78 K when a reverse bias is applied to the diode. The transformations between A and B configurations are found to be temperature and illumination induced, bias controlled, and completely reversible: B to A at 145 K and A to B at 325 K. It is supposed that the W defect is a complex which is annealed up to 250 °C. The configuration coordinate diagram for the W defect is proposed.