1997
DOI: 10.1051/mmm:0199700804-5026100
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Characterization of W Films on Si and SiO2/Si Substrates by X-Ray Diffraction, AFM and Blister Test Adhesion Measurements

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Cited by 20 publications
(11 citation statements)
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“…The adhesion energy of the PEEK membrane on its silicon support can be estimated from the blister-test experiment [22]. In a similar configuration to the bulge test, we measured the pressure level needed to the decohesion of the membrane from its periphery.…”
Section: Adhesion Energymentioning
confidence: 99%
“…The adhesion energy of the PEEK membrane on its silicon support can be estimated from the blister-test experiment [22]. In a similar configuration to the bulge test, we measured the pressure level needed to the decohesion of the membrane from its periphery.…”
Section: Adhesion Energymentioning
confidence: 99%
“…Above a critical pressure, the film might debond from the substrate before breaking. The determination of this critical pressure 23,24 or better, the measurement of P(h) 16,[25][26][27][28] or pressure versus time 29 during the interfacial crack growth, is called the blister test. The P(h) curve is an hyperbola from which the interfacial fracture toughness can be quantified 16,[25][26][27][28] .…”
Section: Introductionmentioning
confidence: 99%
“…The determination of this critical pressure 23,24 or better, the measurement of P(h) 16,[25][26][27][28] or pressure versus time 29 during the interfacial crack growth, is called the blister test. The P(h) curve is an hyperbola from which the interfacial fracture toughness can be quantified 16,[25][26][27][28] . The blister test method was first proposed by Danneberg 23 and was subsequently applied to a large variety of systems such as paints 30 , adhesive 24,29,31 ,and thin deposited films 16,[25][26][27][28]32 .…”
Section: Introductionmentioning
confidence: 99%
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“…This method allows to measure the surface topography and determine the dimensions of the structures in the subatomic resolution [1]. Due to its properties, it can be applied to the measurement of conductors and semiconductor surfaces prepared in various processes.…”
Section: Afm Characterization Of Sno2 Thin Films Obtained By Magnetromentioning
confidence: 99%