Characterization of WO₃Thin Films Grown on Silicon by HFMOD

Abstract

We studied the effect of annealing temperature on the physical properties of WO3thin films using different experimental techniques. WO3has been prepared by hot-filament metal oxide deposition (HFMOD). The films, chemical stoichiometry was determined by X-ray photoelectron spectroscopy (XPS). The monoclinic single-phase nature of the as-deposited films, structure was changed to triclinic structure by annealing them at higher temperatures than 400°C, which has been determined by the X-ray diffraction analysis. By Raman scattering is confirmed the change of crystalline phase, of monoclinic to triclinic, since that lattice vibrational modes of as-deposited WO3and annealed at 500°C present clearly differences. WO3band gap energy can be varied from 2.92 to 3.15 eV by annealing WO3from 0 to 500°C as was obtained by transmittance measurements. The photoluminescence response of the as-deposited film presents three radiative transitions observed at 2.85, 2.41, and 2.04 eV that could be associated with oxygen vacancies; the first one is shifted to higher energies as the annealing temperature is increased due to the change of crystalline phase of the WO3.

Transparent conducting oxide induced by liquid electrolyte gating

“…The third peak is related to the asymmetric stretching modes of the W-O-W chains. After gating, the peaks around 275 and 715 cm −1 are strongly suppressed, and the peak associated with the stretching mode is reduced in intensity, narrowed, and shifted to higher energies, indicating a compressive stress (22). The reduced number of Raman modes in the gated spectrum indicates an increase in symmetry of the gated structure.…”

Expeditious UV detection of tungstite (WO3·H2O) and tungsten oxide (WO3) decorated multiwall carbon nanotubes (MWCNT) based photodetector: ultrafast response and recovery time

“…The peaks in between the range from 180 to 250 cm −1 occurs due to the stretching, bending or deformation of O-W-O as observed at 193 cm −1 and 230 cm −1 in TO1. In case of sample TO2 and TO3, the peaks at 713.8 cm −1 and 805.7 cm −1 are assigned to (O-W-O) stretching vibration Research Article SN Applied Sciences (2020) 2:81 | https://doi.org/10.1007/s42452-019-1799-z whereas the peak at 271.6 cm −1 is due to the (W-O-W) deformation vibration [18][19][20]. The peaks are observed for both hexagonal and monoclinic WO 3 , but the peak 133.0 cm −1 correspond to the monoclinic WO 3 [21].…”

Temperature-dependent electrical transport characteristics of p-SnS/n-WO3:Sb heterojunction diode

“…With outstanding electrochromic, photochromic, gas sensor, photo-catalyst and photoluminescence properties, tungsten oxide has been used to construct smart-window, anti-glare rear view mirrors for automobiles, non-emissive displays, optical recording devices, solid-state gas sensors, humidity and temperature sensors, biosensors, photonic crystals and so forth [1]. SnS is an important II-VI group chalcogenide semiconductor because of their potential applications in the fabrications of photovoltaic, solar cells and optoelectronic devices [2].…”