Temperature-dependent electrical transport characteristics of p-SnS/n-WO₃:Sb heterojunction diode

Abstract

Properties of SnS thin films grown by physical vapour deposition M Ganchev, P Vitanov, M SendovaVassileva et al. Abstract. The p-SnS/n-WO3:Sb heterojunction diode was successfully obtained by thermal evaporating SnS thin films on WO3 doped with 2.0 mol% Sb2O3 of 1 mm thick ceramic pellet substrate. The electrical properties of p-SnS/n-WO3:Sb heterojunction were investigated by forward current-voltage-temperature (I-V-T) characteristics in the temperature range of 20-300 K. It was found that at low forward bias voltage (<0.25V), the conduction mechanism of the diode exhibits Ohmic conduction. At intermediate voltage (0.25<V<1.0V), the conduction mechanism is dominated by thermionic emission (TE). At bias voltage above 1.0 V, the current transport is due to space charge limited current (SCLC) controlled by an exponential trap distribution in the band gap of WO3:Sb. The temperature dependence of the saturation current and ideality factor are well described by tunneling enhanced recombination model occurring at junction interface with Ea and E00 values about 1.565 eV and 99.5 meV, respectively.

A Review on the Properties and Applications of WO3 Nanostructure−Based Optical and Electronic Devices

“…When the forward bias voltage is above 1.0 V, the current transport is space charge limited current (SCLC) according to the exponential trap contribution in the WO 3 :Sb bandgap. ( Figure 16 a) The temperature dependence of the ideality factor n and saturation current can be interpreted by tunneling enhanced recombination model emerging at the interface the heterojunction with E 00 and E a values about 99.5 meV and 1.565 eV, respectively ( Figure 16 ) [ 13 ].…”

“… ( a ) The ln I -ln V plot of p-SnS/n-WO 3 :Sb heterojunction at 300 K. ( b ) ln I-V plots of p-SnS/n-WO 3 :Sb heterojunction at various temperatures. Reproduced or adapted from [ 13 ]. …”

“…Nanostructured WO 3 has a high specific surface area and good surface permeability, making it ideal for a wide range of applications. WO 3 nanostructures in various morphologies (for example, instant nanorods (NRs), nanosheet, 3D nanostructured papilio paris, and thin films (TFs)) have been fabricated for a variety of applications, including gas sensors [ 7 ], efficient water splitting [ 8 ], photoelectrocatalytic activity [ 9 ], memory devices [ 10 ], photodetectors [ 11 , 12 ], and high temperature diodes [ 13 , 14 ]. At present, nanostructured WO 3 are deposited on various substrates to fabricate optical and electrical devices, such as TiO 2 [ 15 ], NiO [ 16 ], ZnO nanowires (NWs) [ 17 ], diamond [ 14 ], Fe 2 WO 6 [ 8 ], and BiVO 4 [ 18 ].…”

The study of structural, optical and electrochromic properties of WO3:Co:Ni thin films deposited by spray pyrolysis

“…WO3 nanostructures were fabricated in thin film morphology for a variety of applications, including gas sensors [12], photo-electrocatalytic activity [13], memory devices [14], and optical detectors [15][16], and high-temperature diodes [17]. WO3 nanostructures are deposited on various substrates to make optical and electrical devices, such as TiO2 [18], NiO [19], ZnO (NWs) [20], diamond [21], Fe2WO6 [22] and BiVO4 [23] nanowires.…”

Unveiling the Electronic Structure of Pseudotetragonal WO3 Thin Films

“…Among the 5d-based oxides, WO 3 has been shown to be promising for applications, with the appearance of flexopiezoelectricity and electrochromism and as a realistic candidate for improving the performance of Li-based batteries . The range of applicability of this material extends also toward gas sensor applications, water splitting, memory devices, high-temperature diodes, , and photodetectors. , WO 3 can be used to make faster and more efficient electronics, − , and it has been proposed theoretically as a candidate system for low-dissipation Rashba ferro- and antiferroelectrics . However, WO 3 generally undergoes several different phase changes that make it difficult to be realistically used over a wide temperature range.…”