Tungsten oxide (WO3) is a wide band gap semiconductor with unintentionally n−doping performance, excellent conductivity, and high electron hall mobility, which is considered as a candidate material for application in optoelectronics. Several reviews on WO3 and its derivatives for various applications dealing with electrochemical, photoelectrochemical, hybrid photocatalysts, electrochemical energy storage, and gas sensors have appeared recently. Moreover, the nanostructured transition metal oxides have attracted considerable attention in the past decade because of their unique chemical, photochromic, and physical properties leading to numerous other potential applications. Owing to their distinctive photoluminescence (PL), electrochromic and electrical properties, WO3 nanostructure−based optical and electronic devices application have attracted a wide range of research interests. This review mainly focuses on the up−to−date progress in different advanced strategies from fundamental analysis to improve WO3 optoelectric, electrochromic, and photochromic properties in the development of tungsten oxide−based advanced devices for optical and electronic applications including photodetectors, light−emitting diodes (LED), PL properties, electrical properties, and optical information storage. This review on the prior findings of WO3−related optical and electrical devices, as well as concluding remarks and forecasts will help researchers to advance the field of optoelectric applications of nanostructured transition metal oxides.

This work explores the temperature-dependent characteristic and carrier transport behavior of a heterojunction of n-WO3 nanorods (NRs)/p-diamond. The n-type WO3 NRs grown by the hydrothermal method were deposited on a p-type boron-doped diamond film. The p-n heterojunction devices showed good thermal stability and have rectification characteristic from room temperature up to 290 °C. With increasing temperature, the turn-on voltages were decreased, and the rectification ratios were relatively high. The calculated ideality factor of the device decreased monotonously with increased temperature. The carrier transport mechanisms at different applied bias voltages following Ohmic laws, recombination-tunneling, and space-charge-limited current conduction of the heterojunction are discussed depending on temperature.

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The n-ZnO nanorods (NRs)/p-diamond heterojunction structures are fabricated by thermal vapor growing ZnO NRs on chemical vapor deposited boron-doped diamond film. Temperature dependent current-voltage (I-V) characteristics of the p-n heterojunction are examined from 25 °C to 220 °C. The turn-on voltage and ideality factor of the devices decrease with increasing temperature, whereas the reverse saturation current increases at higher temperatures. The carrier injection efficiency is effectively enhanced at high temperatures. The electrical transport behaviors are investigated at various temperatures and bias voltages.