Epitaxial growth of ZnO nanorods on diamond and negative differential resistance of n-ZnO nanorod/p-diamond heterojunction

Improved electrical transport properties of an n-ZnO nanowire/p-diamond heterojunction

“…As the electron barrier DE c is two times larger than the hole barrier DE v , the injection current is mainly caused by the injected holes from the valence band. 20,21 Compared to ZnO NRs, the ZnO NWs presented more defect-level including deep levels, which are generally originate from the surface states oxygen vacancies and zinc interstitials.…”

“…Among them, the B-doped diamond lm (bandgap 5.47 eV) is appropriate as a hightemperature p-type conductive material. Up to the present, the electrical transport behavior at higher temperature, 21 the ultraviolet photoelectrical properties 19,24 and the photocatalytic activities 25,26 of n-ZnO NRs/p-diamond heterojunctions have been investigated, however, the n-ZnO NRs/p-BDD heterojunctions have low forward current with 20-80 mA at 5 V. 20,25,27 In this work, we fabricated n-ZnO NWs/p-BDD heterojunction and obtained better I-V performance with forward current of 600 mA. We have made a detail analysis of the current-voltage (I-V) performance of 1D n-ZnO NWs/p-diamond heterojunction.…”

“…Cu 2 O, 16 GaN, 17 graphene, 18 NiO, 7 B-doped diamond lm (BDD) [19][20][21][22] and organic materials, 23 have been exploited as the candidate to replace p-type ZnO semiconductors for the fabrication of pn heterojunctions. Among them, the B-doped diamond lm (bandgap 5.47 eV) is appropriate as a hightemperature p-type conductive material.…”

A Review on the Low‐Dimensional and Hybridized Nanostructured Diamond Films

“…Combining oxide or nitride semiconductors with diamond substrates attracts great attention mainly motivated by the lack of efficient p-type doping in the oxides (nitrides) and n-type doping in diamond, respectively. The complementary configuration of these wide band gap materials with p-type boron-doped diamond and n-type oxides (ZnO, TiO 2 ) and n-type nitrides (GaN, AlN) has been most widely studied recently [10][11][12][13][38][39][40][41][42][43][44][45][46][47][48][49][50][51][52][53]. Generally, growth of oxides and nitrides films on diamond remains challenging due to the high difference in the thermal expansion coefficients and large lattice mismatch (leading to structural imperfections) and relatively less efficient performance of devices.…”

Epitaxy of Carbon-Based Materials

“…In fact, growing (111)-oriented diamond layers on Ir (111) surface is also of high interest to realize high performance n-type doping with phosphorous [58,98] or to combine (0001)-oriented wurtzite-type semiconductors with small lattice mismatch to form heterojunction devices [100][101][102]. In fact, growing (111)-oriented diamond layers on Ir (111) surface is also of high interest to realize high performance n-type doping with phosphorous [58,98] or to combine (0001)-oriented wurtzite-type semiconductors with small lattice mismatch to form heterojunction devices [100][101][102].…”