Characterization of β-Ga2O3 thin films on sapphire (0001) using metal-organic chemical vapor deposition technique

Cross-sectional TEM imaging of β-Ga2 O3 thin films formed on c -plane and a -plane sapphire substrates

“…Regarding the cross‐sectional TEM images, they showed only the periodic image corresponds to the spacing of planes. Recently, a cross‐sectional TEM image of ‐oriented β‐Ga 2 O 3 on (001) sapphire substrate prepared by metal‐organic chemical vapor deposition was reported by Lv et al . They noticed three lattice planes corresponding to Ga 2 O 3 , , and (400).…”

Nanocrystalline Ga2O3 films deposited by spray pyrolysis from water-based solutions on glass and TCO substrates

“…14 b-Ga 2 O 3 can further be applied in water splitting devices, due to its photocatalytic properties. 15 Gallium oxide films are often prepared by vacuum techniques, such as metal-organic chemical vapor deposition (MOCVD), 16 molecular beam epitaxy (MBE), 17 pulsed laser deposition (PLD) 18 or atomic layer deposition (ALD). 19 For lowering the processing costs, solution-based techniques are very attractive.…”

Effect of growth pressure on the characteristics of β-Ga2O3 films grown on GaAs (100) substrates by MOCVD method

“…At present, the ␤-Ga 2 O 3 films could be prepared by many methods, such as molecular beam epitaxy (MBE) [11], pulsed laser deposition [12], plasma enhanced atomic layer deposition (PEALD) [13], electron beam evaporation [14], radio frequency magnetron sputtering [15], spray pyrolysis technique [16], sol-gel method [17], metal organic chemical vapor deposition (MOCVD) [18] and metal organic vapor phase epitaxy (MOVPE) [1]. In our experiment, the MOCVD method is chosen for its flexibility, controllability, scalability into larger commercial systems, and applicability to current device technology [19,20]. Because high quality ␤-Ga 2 O 3 substrates are hard to obtain, the ␤-Ga 2 O 3 films are usually prepared on other substrates, such as Al 2 O 3 , Si, GaAs, MgO, MgAl 2 O 4 , and GaN [1,18,[21][22][23][24][25].…”