Characterizations of deep levels in SnTe-doped GaSb by admittance spectroscopy

Chen, Jenn–Fang; Chen, N. C.; Liu, H. S.

doi:10.1063/1.117468

Cited by 7 publications

(4 citation statements)

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“…The method described by Miller et al for GaN-HEMTs analysis employed in our study is shown in refs. [13,14], Measurements of the gate-drain capacitance and conductance as functions of frequency were performed by HP4156B and the measurement frequencies extended from 10 kHz to 10 MHz. The theoretical curve of / , p G  assuming a continuum of trap levels, can be expressed as: ×10 12 cm 2 eV 1 , which is far less than the increase of HEMT (1.37×10 12 cm 2 eV 1 ).…”

Section: Resultsmentioning

confidence: 99%

The effects of proton irradiation on the electrical properties of NbAlO/AlGaN/GaN MIS-HEMT

Feng

Zhang

et al. 2011

Sci. China Phys. Mech. Astron.

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AlGaN/GaN metal-insulator-semiconductor high electron-mobility transistors (MIS-HEMTs) with atomic layer deposited (ALD) NbAlO gate dielectric were investigated using 3 MeV proton irradiation at a fluence of 10 15 p/cm 2 . It was found that the proton irradiation damage caused degradation in DC performance and a flatband voltage shift in the capacitance-voltage curve. Gate-drain conductance measurements indicated that new traps were introduced in GaN from the irradiation, and the trap densities increased from 1.18×10 12 cm 2 eV 1 to 1.82×10 12 cm 2 eV 1 in MIS-HEMTs after irradiation. However, these increases in trap densities caused by irradiation in MIS-HEMT are less than those in HEMT, which can be attributed to the protection of the AlGaN surface by the NbAlO dielectric layer. AlGaN/GaN, MIS-HEMT, proton irradiation, trap PACS number(s): 85.30.Tv, 73.40.Qv, 77.55.+f, 61.82.Fk Citation:AlGaN/GaN high electron-mobility transistors (HEMTs) have recently emerged as attractive transistors suitable for high-power and high-frequency applications [1]. However, larger gate leakage currents in HEMTs due to surface defects and the finite barrier height of AlGaN limit the performance and reliability of devices, especially the breakdown voltage and power handling capabilities [2]. Previously, several groups have attempted to solve this problem by applying the metal-insulator-semiconductor (MIS) structure. For example, S i O 2 [3], Al 2 O 3 [4], and HfO 2 [5] have all been widely used for gate dielectric layers. The high-k dielectric layer can be thickened without reducing the transconductance of HEMTs. In this paper, we choose atomic layer deposition (ALD) Nb0.1Al0.9O as the gate insulator layer, because it has a larger bandgap (6.7) than HfO 2 and a higher dielectric constant (15) than Al 2 O 3 . The NbAlO MISHEMTs have been fabricated successfully and the gate leakage current decreased about three orders of magnitude less than HEMT [6]. In addition, GaN-based devices are radiation harder than GaAs devices, and hence are known for several unique applications, such as satellite-based communication systems and nuclear industry applications [7], in which devices would be set in place where they are exposed to a great deal of particle radiation. Therefore, GaN-based devices are expected to have higher resistance against radiation than conventional devices. Previous studies observed significant degradation in the performances of AlGaN/GaN HEMTs after a fluence of 10 14 10 15 p/cm 2 1.8 MeV protons [8]. The degradation is identified by a decrease in the maximum transconductance, an increase in the threshold voltage, and a decrease in the drain saturation

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Section: Resultsmentioning

confidence: 99%

The effects of proton irradiation on the electrical properties of NbAlO/AlGaN/GaN MIS-HEMT

Feng

Zhang

et al. 2011

Sci. China Phys. Mech. Astron.

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“…Frequency-dependent measurements of the capacitance and conductance of semiconductor structures have been successfully employed to investigate trap states in GaAs and GaSb, 8,9 and studies of the conductance dispersion in an HFET gate-drain diode have been useful in understanding traps in the InAlAs/InP system. 10 Capacitance and conductance studies are particularly appropriate for determining the effects of traps.…”

Section: Introductionmentioning

confidence: 99%

Trap characterization by gate-drain conductance and capacitance dispersion studies of an AlGaN/GaN heterostructure field-effect transistor

Miller

Dang

Wieder

et al. 2000

Journal of Applied Physics

119

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Gate-drain capacitance and conductance measurements were performed on an Al 0.15 Ga 0.85 N/GaN heterostructure field-effect transistor to study the effects of trap states on frequency-dependent device characteristics. By varying the measurement frequency in addition to the bias applied to the gate, the density and time constants of the trap states have been determined as functions of gate bias. Detailed analysis of the frequency-dependent capacitance and conductance data was performed assuming models in which traps are present at the heterojunction ͑interface traps͒, in the AlGaN barrier layer ͑bulk traps͒, and at the gate contact ͑metal-semiconductor traps͒. Bias-dependent measurements were performed at voltages in the vicinity of the transistor threshold voltage, yielding time constants on the order of 1 s and trap densities of approximately 10 12 cm Ϫ2 eV Ϫ1 .

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“…This value is comparable to those found in diodes formed by Al deposition on Tedoped GaSb grown using alternative metalorganic sources. 9 …”

Section: Capacitance-voltage (C-v) Measurementsmentioning

confidence: 97%

Electrical properties of p-n junction GaSb fabricated from spin coating using Zn-diffusion method

Ramelan

Goldys

Arifin

2010

2010 Conference on Optoelectronic and Microelectronic Materials and Devices

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The GaSb-based material system is attractive for application in photovoltaic (PV) cells since its band gap can be tuned to match the radiation of the emitter. At present, most of the PV cells are fabricated using epitaxial layers and hence are expensive. To reduce the cost, Zn diffusion using elemental vapors in a semiclosed diffusion system is conducted. In this paper, we present studies carried out on Zn diffusion into ntype (Te-doped) GaSb substrates in an open tube diffusion furnace. The diffusion was carried out at a temperature of 600°C, for a diffusion time from 4 to 12 hours. The diffused layers were characterized by current-voltage and capacitance-voltage measurements.

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Characterizations of deep levels in SnTe-doped GaSb by admittance spectroscopy

Cited by 7 publications

References 0 publications

The effects of proton irradiation on the electrical properties of NbAlO/AlGaN/GaN MIS-HEMT

The effects of proton irradiation on the electrical properties of NbAlO/AlGaN/GaN MIS-HEMT

Trap characterization by gate-drain conductance and capacitance dispersion studies of an AlGaN/GaN heterostructure field-effect transistor

Electrical properties of p-n junction GaSb fabricated from spin coating using Zn-diffusion method

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