No abstract

The efficiency of titanium dioxide (TiO2)-based film solar cells fabricated by combined spray and electroplating methods was improved by forming metal bridges in the pores between TiO2 nanoparticles. The interfaces between TiO2 nanoparticles and metal bridges formed Schottky contacts, which minimized recombination of electron-hole pairs and increased electron transfer. A maximum efficiency of 4.38% was achieved for cells plated at 50 mA and 55 °C. This efficiency is higher than that reported for solar cells with a similar structure [Saehana et al., AIP Conf. Proc. 1284, 154 (2010); 1415, 163 (2011); IJBAS/IJENS 11, 15 (2011)]. We also identified that both current and temperature influence the morphology of the metal bridges and efficiency of the solar cell.

SURFACE ROUGHNESS AND GRAIN SIZE CHARACTERIZATION OF ANNEALING TEMPERATURE EFFECT FOR GROWTH GALLIUM ANDTANTALUM DOPED Ba 0.5 Sr 0.5 TiO 3 THIN FILM. Thin films 10 % gallium oxide doped barium strontium titanate (BGST) and 10 % tantalum oxide doped barium strontium titanate (BTST) were prepared on p-type Si (100) substrates using chemical solution deposition (CSD) method with 1.00 M precursor. The films were deposited by spin coating method with spinning speed at 3000 rpm for 30 seconds. The post deposition annealing of the films were carried out in a furnace at 200 o C, 240 o C, 280 o C (low temperature) for 1 hour in oxygen gas atmosphere. The surface roughness and grain size analysis of the grown thin films are described by atomic force microscope (AFM) method at 5000 nm x 5000 nm area. The rms surface roughness BGST thin films at 5000 nm x 5000 nm area are 0. o C would result in decreasing the rms roughness and grain size. Therefore, rms roughness and grain size would have the strong correlation annealing temperature.

In this paper we have grown pure Ba 0.25 Sr 0.75 TiO 3 (BST) and BST doped by Ferric Oxide Fe 2 O 3 (BFST) with doping variations of 5%, 10%, and 15% above type-p Silicon (100) substrate using the chemical solution deposition (CSD) method with spin coating technique at rotation speed of 3000 rpm, for 30 seconds. BST thin film are made with a concentration of 1 M 2-methoxyethanol and annealing temperature of 850 O C for the Si (100) substrate. Characterization of the thin film is performed for the electrical properties such as the current-voltage (I-V) curve using Keithley model 2400 as well as dielectric constant, time constant, pyroelectric characteristics, and depth measurement. The results show that the thin film depth increases if the concentration of the Ferric Oxide doping increases. The I-V characterization shows that the BST and BFST thin film has photodiode properties. The dielectric constant increases with the addition of doping. The maximum dielectric constant value is obtained for 15 % doping concentration namely 83.1 for pure BST and 6.89, 11.1, 41.63 and 83.1, respectively for the Ferric Oxide doping based BST with concentration of 5%, 10%, and 15%. XRD spectra of 15 % of ferric oxide doped BST thin film tetragonal phase, we carried out the lattice constant were a = b = 4.203 Å; c = 4.214 Å; c/a ratio = 1.003.

No abstract