Growth of GaN film on a-plane sapphire substrates by plasma-assisted MOCVD

Structure of Gd2O3 films epitaxially grown on GaAs(100) and GaN(0001) surfaces

“…16 Gallium nitride has been grown on an Al 2 O 3 substrate in the wurtzite structure with its [0001] direction along the surface normal. 5 Previously, a rotation of 30°between the Al 2 O 3 and the GaN structures, resulting from the lattice mismatch at the GaN/Al 2 O 3 interface, was reported by Sugianto et al 17 The lattice parameters of the hexagonal Gd 2 O 3 structure are 0.386 and 0.616 nm, whereas they are 0.318 and 0.517 nm for GaN. 18 Hence, a similar mismatch is also present at the Gd 2 O 3 /GaN interface.…”

Growth and characterization of pendeo-epitaxial GaN on 4H–SiC substrates

“…The occurrence of stacking faults is somewhat surprising, as they had not been observed in either our conventional or our pendeo-epitaxial [0 0 0 1]-oriented GaN films grown on 6H-SiC(0 0 0 1) substrates. As expected, the wing regions contain reduced densities of dislocations and stacking Table 1 Results of DOE studies with n ¼ 2 full factorial with a center-point to determine the effect of temperature and V/III ratio on the growth rate of GaN vertically from the ð1 1 2 0Þ surface (V) and laterally from both the Ga-terminated (0 0 0 1) face (Lg) and the N-terminated ð0 0 0 1Þface (Ln) and on the ratios Rg (Lg/V) and Rn (Ln/V) faults in comparison to both the seed regions of the sample and to other reported [9][10][11][12] values of dislocation density in GaN ð1 1 2 0Þ films where no lateral growth techniques were employed. The wing regions also contain large areas where dislocations are not observed; this is equivalent to a density of $1 Â 10 6 cm À2 , the lowest reasonable value for this metric that can be determined from a few TEM micrographs.…”

“…This spatial separation causes a reduction in oscillator strength and a red shift in optical transitions due to a reduced quantum recombination efficiency [8] in quantum wells in III-nitride optoelectronic devices grown along the polar c-axis. To circumvent these effects, non-polar GaN-based layers have been grown and characterized on non-polar substrates including a-plane 4H-SiCð1 12 0Þ [9], and on non-c-axisoriented materials including r-plane sapphire ð1 1 0 2Þ [10,11], a-plane sapphire ð1 1 2 0Þ [12], and tetragonal (g) LiAlO 2 [13]. Devices have been fabricated [14][15][16][17][18] on nonpolar GaN-based layers, and direct comparisons of nonpolar and polar devices [19] have also been reported.…”

Synthesis, thermal stability, and photocatalytic activity of nanocrystalline gallium nitride via the reaction of Ga2O3 and NH4Cl at low temperature

“…Traditionally, many approaches have been developed for the preparation of gallium nitride, such as metal organic vapor phase extension (MOVPE) [11][12][13][14], the molecular beam extension (MBE) [15,16], the hydride vapor phase extension (HVPE) [17] and alumina templates method [18,19]. Qian and co-workers [20] reported a benzene-thermal route to prepare nanocrystalline gallium nitride.…”