Characterizations of GaN film growth by ECR plasma chemical vapor deposition

Novel Epitaxy for Nitride Semiconductors Using Plasma Technology

“…To overcome the disadvantage of the usage of ammonia gas, plasma‐enhanced MOCVD (PEMOCVD) [ 28–47 ] has been studied in the past two decades. In this method, GaN films can be grown by the reaction of TMG with N‐radicals generated in plasma with excitation at various frequencies.…”

Measurements of nitrogen atom density in a microwave‐excited plasma jet produced under moderate pressures

“…E-mail: jaeho.kim@aist.go.jp *Research Institute for Advanced Electronics and Photonics, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan **GaN Advanced Device Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), Nagoya, Aichi, Japan ***Center for Low-temperature Plasma Sciences, Nagoya University, Nagoya, Aichi, Japan ****Faculty of Science and Technology, Meijo University, Nagoya, Aichi, Japan *****Advanced Manufacturing Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, 305-8564, Japan and a low-temperature growth of silicon nitride films [8]. In addition, nitrogen plasmas have been studied to develop the growth processes of GaN [9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28], which is a III-nitride semiconductor material with numerous applications in opto-electronic devices such as light emitting diodes, laser diode, and electronic devices based on high-electron-mobility transistors [25,29]. Over the past few decades, plasma-assisted methods such as plasma-assisted metalorganic chemical vapor deposition [9,[12][13][14]16,18,21,23,25], plasma-assisted molecular beam epitaxy [10,11,15,[19][20][21]…”

“…In addition, nitrogen plasmas have been studied to develop the growth processes of GaN [9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28], which is a III-nitride semiconductor material with numerous applications in opto-electronic devices such as light emitting diodes, laser diode, and electronic devices based on high-electron-mobility transistors [25,29]. Over the past few decades, plasma-assisted methods such as plasma-assisted metalorganic chemical vapor deposition [9,[12][13][14]16,18,21,23,25], plasma-assisted molecular beam epitaxy [10,11,15,[19][20][21][22]26,28], and plasma-assisted atomic layer deposition [24,27] have been studied in regard to the growth of GaN using plasma-activated nitrogen species.…”

“…In these processes, various plasma sources excited by electrical power supplies with high frequencies in the radio frequency (RF) band of 13.56 MHz [2,5,7,8,[14][15][16]20,22,24,26,27], very high frequency (VHF) band of 60 MHz [25], and microwave band of 2.45 GHz [9][10][11][12][13]17,18,21,23] have been employed to produce active nitrogen radicals at low pressures in the range from 0.4 to 267 Pa. Those sources can produce high radical densities because of the efficient electric power coupling with plasma directly through waves in the plasma [25]. However, an advanced nitrogen plasma source capable of producing higher radical densities, reducing ion bombardment damage on substrates, and enlarging processing area while maintaining uniformity is still strongly required for industrial applications.…”

“…A microwave-excited plasma (MWP) has some advantages over other types of plasma sources as it has a wide range of operating pressures from 10 −2 Pa up to pressures exceeding the atmospheric pressure, allows a wide range of plasma absorbed power, and eliminates the possibility of contamination of the plasma and treated surfaces through electrode erosion because of the electrode less discharge [30]. However, previous MWP sources providing nitrogen radicals such as electron cyclotron resonance plasmas [9,11,21,23], tubular-microwave-reactor plasmas [12,13,17,21,23], and resonant-cavity-downstream plasmas [18] impose limitations on enlarging the processing area and reducing the microwave power at high pressure because of a lack in structural flexibility and expandability of rectangular waveguides, external magnetic field controllers, tubular reactors, and resonance cavities.…”