Characterizations of individual ZnMgO nanowires synthesized by a vapor‐transport method

Tang, Haichao; Kwon, Bong Jun; Park, Jiyong

doi:10.1002/pssa.201026120

Cited by 9 publications

(9 citation statements)

References 34 publications

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“…Chakrabarti et al [20] have also reported on XRD peaks that could be indexed to a hexagonal wurtzite ZnO structure and decreased in both a and c cell parameters of Mg-doped ZnO for x values from 0 to 0.15. A shift in the XRD peaks of Mg-doped ZnO is found by Zhuang et al [16] and Haiping Tang et al [1]. C axis contraction of Mg-doped ZnO has been presented by Kumar et al [11], Wang et al [15], and Wang et al [14].…”

Section: Xrd and Rietveld Refinement Analysismentioning

confidence: 89%

“…Recently, various nanostructures of zinc oxide (ZnO) have attracted global interest and led to active research activities with possible applications in electronic, optoelectronic, and energy-conversion devices [1]. ZnO is an excellent electronic and photonic material having a wide band gap (E g ≈ 3.27 eV) and a large exciton binding energy of 60 meV.…”

Section: Introductionmentioning

confidence: 99%

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Solubility Limit of Sol–Gel Grown Nano Zn_1-xMg_xO Through Charge Density Distribution

Francis¹,

Ramachandran²,

Açıkgöz³

2013

Zeitschrift Für Naturforschung A

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The mixed oxides Zn 1−x Mg x O were prepared as polycrystalline powders with various compositions (x = 0.02, 0.04, 0.05, and 0.10) using sol-gel technique. X-ray diffractometer (XRD) was used to characterize the powders for structural and electronic properties. X-ray diffraction analysis reveals that all the prepared samples exhibit the single wurtzite phase of zinc oxide (ZnO), and magnesiumdoping does not induce any secondary phase in the samples. The Bragg peak positions in the XRD patterns are found to be shifted towards higher 2θ values with more addition of magnesium in the zinc oxide lattice. Magnesium addition in the zinc oxide lattice is found to enhance the mid bond electron density distribution up to x = 0.05 and then decrease for x = 0.10. Evidence of host lattice as well as interstitial addition of Mg 2+ ions has been realized for x = 0.10, through electron density analysis.

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Section: Xrd and Rietveld Refinement Analysismentioning

confidence: 89%

Section: Introductionmentioning

confidence: 99%

Solubility Limit of Sol–Gel Grown Nano Zn_1-xMg_xO Through Charge Density Distribution

Francis¹,

Ramachandran²,

Açıkgöz³

2013

Zeitschrift Für Naturforschung A

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“…ZnO NWs used for this experiment were prepared by vapor‐phase transport 21 with a carbothermal reduction process in a dual‐tube low‐pressure chemical vapor deposition (LPCVD) system as previously reported 22, 23. A 1:1 mixture of pure ZnO (0.5 g, Aldrich, 99.99%) and graphite powder (0.5 g, Sigma–Aldrich, particle size ≤20 µm) is used as a source material and Si wafer with 200‐nm thick SiO 2 is employed as a substrate.…”

Section: Methodsmentioning

confidence: 99%

Effects of humidity on the electrical characteristics of ZnO nanowire devices

Kim

Jeong

Ahn

et al. 2012

Physica Status Solidi (a)

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Changes in the electrical characteristics of individual ZnO nanowire (NW) devices when they are exposed to wet air (80% relative humidity, RH) at room temperature are investigated. Significant roughening on the surface of ZnO NWs is observed after they are exposed to wet air for more than tens of hours. I-V characteristics taken after exposure to humidity show positive shifts of the threshold voltages in ZnO NW field effect transistors (FETs), which indicate depletion of carriers. These results have implication about the long-term stability of such devices when they need to be in direct contact with the ambient environment for their operations.Surface roughening on a ZnO NW due to exposure to humidity (left) and corresponding changes in transfer characteristics of the device with its exposure time to humidity (right).

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“…4−6 Substitutional doping of Mg with ZnO, on the other hand, has been described as a means of engineering the bandgap of a ternary Zn x Mg 1– x O system as high as a 5.8 eV for solar-blind photodetectors. 7−10 Although Mg has been reported as a feasible dopant to ZnO (due to the similar ionic radii of Zn 2+ and Mg 2+ ), 11,12 Mg/ZnO alloy systems have also shown to phase segregate for high Mg content. 13 Thus, the development of reliable techniques toward synthesizing aligned ZnO nanowires, and appreciably incorporating Mg during synthesis is of great significance.…”

Section: Introductionmentioning

confidence: 99%

Vapor-Transport Synthesis and Annealing Study of Zn_xMg_1–xO Nanowire Arrays for Selective, Solar-Blind UV-C Detection

et al. 2018

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This work uniquely reports the synthesis of Zn x Mg 1– x O nanowires and submicron columns by utilizing a traditional carbothermal reduction process toward forming ZnO nanowire ultraviolet detectors, while simultaneously utilizing Mg 3 N 2 as the source of Mg. To investigate the relationship between Mg content in the ZnO lattice and the cutoff wavelength for high spectral responsivity, the nanowires were annealed in a series of designed conditions, whereas chemical, nanostructural, and optoelectronic characteristics were compared before and after treatment. Postanneal scanning electron micrographs revealed a reduction of the average ensemble nanowire dimensions, which was correlated to the modification of ZnO lattice parameters stemming from Zn 2+ dissociation and Mg 2+ substitution (confirmed via Raman spectroscopy). The analysis of cathodoluminescence spectra revealed a blueshift of the peak alloy band-edge emission along with a redshift of the ZnO band-edge emission; and both were found to be strong functions of the annealing temperature. The conversion of Zn 2 SiO 4 to Mg 2 SiO 4 (in O 2 ) and MgSiO 3 (in Ar) was found to correspond to transformations (shifting and scaling) of high-energy luminescence peaks and was confirmed with X-ray diffraction analysis. The tunability of the cutoff photodetection wavelength was evaluated as the nanowire arrays exhibited selective absorption by retaining elevated conduction under high-energy UV-C irradiation after thermal treatment but exhibiting suppressed conductivity and a single order of magnitude reduction in both spectral responsivity ( R λ ) and photoconductive gain ( G ) under UV-A illumination. Noise analysis revealed that the variation of detectivity ( D *) depended on the regime of ultraviolet irradiation, and that these variations are related to thermal noise resulting from oxygen-related defects on both nanowire and substrate surfaces. These results suggest a minor design tradeoff between the noise characteristics of thermally treated ZnMgO nanowire array UV detectors and the tunability of their spectral sensitivity.

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Characterizations of individual ZnMgO nanowires synthesized by a vapor‐transport method

Cited by 9 publications

References 34 publications

Solubility Limit of Sol–Gel Grown Nano Zn_1-xMg_xO Through Charge Density Distribution

Solubility Limit of Sol–Gel Grown Nano Zn_1-xMg_xO Through Charge Density Distribution

Effects of humidity on the electrical characteristics of ZnO nanowire devices

Vapor-Transport Synthesis and Annealing Study of Zn_xMg_1–xO Nanowire Arrays for Selective, Solar-Blind UV-C Detection

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Characterizations of individual ZnMgO nanowires synthesized by a vapor‐transport method

Cited by 9 publications

References 34 publications

Solubility Limit of Sol–Gel Grown Nano Zn1-xMgxO Through Charge Density Distribution

Solubility Limit of Sol–Gel Grown Nano Zn1-xMgxO Through Charge Density Distribution

Effects of humidity on the electrical characteristics of ZnO nanowire devices

Vapor-Transport Synthesis and Annealing Study of ZnxMg1–xO Nanowire Arrays for Selective, Solar-Blind UV-C Detection

Contact Info

Product

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About

Solubility Limit of Sol–Gel Grown Nano Zn_1-xMg_xO Through Charge Density Distribution

Solubility Limit of Sol–Gel Grown Nano Zn_1-xMg_xO Through Charge Density Distribution

Vapor-Transport Synthesis and Annealing Study of Zn_xMg_1–xO Nanowire Arrays for Selective, Solar-Blind UV-C Detection