Characterizing Bandgap Gratings in GaAs : AlAs Superlattice Structures Using Interface Phonons

Scrutton, P.; Sorel, Marc; Hutchings, D. C.; Aitchison, J. S.; Helmy, Amr S.

doi:10.1109/lpt.2007.894985

Cited by 5 publications

(7 citation statements)

References 11 publications

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“…7(b), in order to increase the resolution of the intermixing process. MicroRaman spectroscopy has confirmed that first-order gratings can be formed by this technique [82]. As a result, higher SHG conversion efficiencies were recorded [83,84].…”

Section: Periodically Intermixed Waveguidesmentioning

confidence: 92%

“…More specifically, we increased the index contrast between the cladding and the guiding layer compared with previous designs [35,36] to minimize the effective mode area, while choosing the guiding layer composition to be Al 0.18 Ga 0. 82 As, corresponding to a transparency window between the two-and three-photon absorption peaks, within the telecom C-band [36].…”

Section: Spm Xpm and Fwm In Algaas Strip-loaded Waveguidesmentioning

confidence: 99%

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Optical frequency conversion in integrated devices [Invited]

et al. 2011

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We review our recent progresses on frequency conversion in integrated devices, focusing primarily on experiments based on strip-loaded and quantum-well intermixed AlGaAs waveguides, and on CMOS-compatible high-index doped silica glass waveguides. The former includes both second-and third-order interactions, demonstrating wavelength 2 conversion by tunable difference-frequency generation over a bandwidth of more than 100 nm, as well as broadband self-phase modulation and tunable four-wave mixing. The latter includes four-wave mixing using low-power continuous-wave light in microring resonators as well as hyper-parametric oscillation in a high quality factor resonator, towards the realization of an integrated multiple wavelength source with important applications for telecommunications, spectroscopy, and metrology.

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Section: Periodically Intermixed Waveguidesmentioning

confidence: 92%

Section: Spm Xpm and Fwm In Algaas Strip-loaded Waveguidesmentioning

confidence: 99%

Optical frequency conversion in integrated devices [Invited]

et al. 2011

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“…This limits lateral diffusion of the defects. Using micro-Raman spectroscopy, it was shown that IID was able to produce the necessary feature sizes for first-order QPM gratings [77]. Secondly, the degree of intermixing can be easily controlled by altering the ion dosage.…”

Section: Laser and Photonics Reviewsmentioning

confidence: 99%

Recent advances in phase matching of second‐order nonlinearities in monolithic semiconductor waveguides

Helmy

Abolghasem

Aitchison

et al. 2010

Laser & Photonics Reviews

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Techniques used to assist phase matching of second-order nonlinearities in semiconductor waveguides are reviewed. The salient points of each method are highlighted, with their strengths and weaknesses with regard to various key applications discussed. Recent progress in these techniques is also reviewed. Emphasis is placed on two techniques, namely quasi-phase matching via domain disordering utilizing quantum well intermixing, and exact phase matching using Bragg reflection waveguides.The figure shows (a) An optical microscope image of an ion implantation mask used to fabricate gratings used for quasiphase matching, (b) a scanning electron micrograph of an ion implantation mask, (c) a scanning electron micrograph of a semiconductor ridge waveguide structure, and (d) an optical microscope image of group monolithic ring lasers designed for integration with quasiphase matched structures.

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“…It should also be noted that bulk Raman modes of the lattice have been used previously to characterize intermixing. 13,14 However, the modulation in the bulk Raman modes offers a limited compositional dispersion and hence provide limited signal to noise ratio ͑SNR͒ when investigating compositional intermixing.…”

Section: Introductionmentioning

confidence: 99%

Effect of intermixing on bulk and interface Raman modes in GaAs:AlAs superlattice waveguide structures

Scrutton

Fung

Helmy

2008

Journal of Applied Physics

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Spatially resolved Raman spectroscopy at room temperature is used to study quantum well intermixing in GaAs:AlAs superlattice structures. Phonon modes are probed from the side facet along the ͓110͔ direction. The intermixing leads to the appearance of interfacial alloy modes and degraded the intensity of the superlattice interface ͑IF͒ modes, which can be used as a sensitive indicator of superlattice quality. These changes in the Raman spectra, along with spatially resolved photoluminescence, are used to distinguish the degree of intermixing in samples intermixed by impurity free vacancy diffusion at 850-950°C, and to investigate the bandgap modulation in a periodically intermixed bandgap grating fabricated using ion implantation induced disordering. The shift of the GaAs-transverse optic mode to the GaAs-like transverse optic alloy mode and the degradation of the GaAs-IF mode are shown to provide the best indication of the extent of intermixing. Due to the large contrast in the GaAs-IF mode intensity between as-grown and intermixed superlattice, using IF modes is found to be a promising route for characterizing the resolution of the superlattice bandgap grating.

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Characterizing Bandgap Gratings in GaAs : AlAs Superlattice Structures Using Interface Phonons

Cited by 5 publications

References 11 publications

Optical frequency conversion in integrated devices [Invited]

Optical frequency conversion in integrated devices [Invited]

Recent advances in phase matching of second‐order nonlinearities in monolithic semiconductor waveguides

Effect of intermixing on bulk and interface Raman modes in GaAs:AlAs superlattice waveguide structures

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