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Abstract-We report on the characterization of planar waveguides formed in the Raman-active crystal KGd(WO 4 ) 2 using swift carbon, fluorine, and oxygen ion irradiation. The characterization of the waveguiding regions was performed using high-resolution microreflectivity and micro-Raman spectroscopy. The high-resolution microreflectivity measurement fully characterizes the refractive index profile of the barrier formed by amorphization of the crystal and detects other index variations not detected by the m-line technique. Raman spectroscopy measurements reveal details of the Raman properties of the crystal in the waveguiding region in relation to the rest of the sample for the different ion irradiations. Both of these measurement techniques are shown to be important for use of KGd(WO 4 ) 2 in integrated Raman-active devices.

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Ultrashort pulse laser interaction with silica-silicon interfaces is presented as a means for all-solid-phase formation of high-purity silicon nanoparticles in the absence of ablation plumes or any substrate intermixing with surfaces in ambient air. Transmission electron microscopy and Raman spectroscopy provide definitive evidence for creation of nanocrystals in the silica host, while compressive stress in the silicon substrate corroborates the formation of optical waveguides parallel to the tracks.

We report Raman spectroscopy measurements of waveguides formed in KGd(WO 4 ) 2 using swift heavy ion irradiation. Results show good preservation of Raman properties in the guiding region of the waveguide when irradiated with carbon ions, and a marked reduction in Raman properties when irradiated with oxygen and fluorine ions.