Characterizing photolithographic linewidth sensitivity to process temperature variations for advanced resists using a thermal array

Processing chemically amplified resists on advanced photomasks using a thermal array

“…The thermal array was used for both the post-apply and post-exposure baking step for an array of 19 Â 23 measurement matrix. The results demonstrate good control of linewidth for a chemically amplified photoresist manufactured by Clariant [13]. The results generated a 9 nm, 3-sigma result at a mean linewidth of approximately 1.0 lm test structures on a general 6 in.…”

Parameter analysis of hot plate in lithography process based on regression orthogonal experiment design

“…The temperature uniformity of hot plate surface is very important, especially during the prebake and the post-exposure bake [1][2][3][4]. Since resist tension and the chemical substances in resist are so sensitive to the temperature, that a little change of the temperature will largely affect the line width that will be printed on the wafer [5]. As the line width of circuit is smaller and smaller, the temperature of hot plate surface is also need to become more and more uniform [5][6][7][8].…”