Charge avalanches and depinning in the Coulomb glass: The role of long-range interactions

Andresen, Juan Carlos; Pramudya, Yohanes; Katzgraber, Helmut G.; Thomas, Creighton K.; Zimányi, Gergely T.; Dobrosavljević, Vladimir

doi:10.1103/physrevb.93.094429

Cited by 3 publications

(2 citation statements)

References 60 publications

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“…The latter is in agreement with the findings of Ref. [55], which studied the response via restricted hops, as triggered by an electric field. These results were interpreted in terms of simple branching processes [12], similar to the ones we will discuss in Sec.…”

Section: B Avalanchessupporting

confidence: 82%

“…However, their size and character depends on the allowed dynamical moves. [12,55] Arguments as for electron glasses apply to any frustrated system with discrete degrees of freedom and longrange interactions which decay as 1/r γ , where one obtains the bound α ≥ d/γ − 1. Examples are logarithmically interacting objects -such as vortices in 2d superconductors [56] and electrons in thin, highly polarizable films [57] -or dipolar systems with interactions 1/r 3 .…”

Section: A Coulomb Gapmentioning

confidence: 99%

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Marginal Stability in Structural, Spin, and Electron Glasses

Müller

Wyart

2015

Annu. Rev. Condens. Matter Phys.

183

264

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We revisit the concept of marginal stability in glasses, and determine its range of applicability in the context of avalanche-type response to slow external driving. We argue that there is an intimate connection between a pseudo-gap in the distribution of local fields and crackling in systems with long-range interactions. We show how the principle of marginal stability offers a unifying perspective on the phenomenology of systems as diverse as spin and electron glasses, hard spheres, pinned elastic interfaces and the plasticity of soft amorphous solids.

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Section: B Avalanchessupporting

confidence: 82%

Section: A Coulomb Gapmentioning

confidence: 99%

Marginal Stability in Structural, Spin, and Electron Glasses

Müller

Wyart

2015

Annu. Rev. Condens. Matter Phys.

183

264

View full text Add to dashboard Cite

show abstract

Room-temperature single dopant atom quantum dot transistors in silicon, formed by field-emission scanning probe lithography

Durrani

Jones

Abualnaja

et al. 2018

Journal of Applied Physics

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Electrical operation of room-temperature (RT) single dopant atom quantum dot (QD) transistors, based on phosphorous atoms isolated within nanoscale SiO2 tunnel barriers, is presented. In contrast to single dopant transistors in silicon, where the QD potential well is shallow and device operation limited to cryogenic temperature, here, a deep (~2 eV) potential well allows electron confinement at RT. Our transistors use ~10 nm size scale Si/SiO2/Si pointcontact tunnel junctions, defined by scanning probe lithography and geometric oxidation.'Coulomb diamond' charge stability plots are measured at 290 K, with QD addition energy ~0.3 eV. Theoretical simulation gives a QD size of similar order to the phosphorous atom separation ~2 nm. Extraction of energy states predicts an anharmonic QD potential, fitted using a Morse oscillator-like potential. The results extend single-atom transistor operation to RT, enable tunnelling spectroscopy of impurity atoms in insulators, and allow the energy landscape for P atoms in SiO2 to be determined.

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Gaps between avalanches in one-dimensional random-field Ising models

et al. 2017

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We analyze the statistics of gaps (ΔH) between successive avalanches in one-dimensional random-field Ising models (RFIMs) in an external field H at zero temperature. In the first part of the paper we study the nearest-neighbor ferromagnetic RFIM. We map the sequence of avalanches in this system to a nonhomogeneous Poisson process with an H-dependent rate ρ(H). We use this to analytically compute the distribution of gaps P(ΔH) between avalanches as the field is increased monotonically from -∞ to +∞. We show that P(ΔH) tends to a constant C(R) as ΔH→0^{+}, which displays a nontrivial behavior with the strength of disorder R. We verify our predictions with numerical simulations. In the second part of the paper, motivated by avalanche gap distributions in driven disordered amorphous solids, we study a long-range antiferromagnetic RFIM. This model displays a gapped behavior P(ΔH)=0 up to a system size dependent offset value ΔH_{off}, and P(ΔH)∼(ΔH-ΔH_{off})^{θ} as ΔH→H_{off}^{+}. We perform numerical simulations on this model and determine θ≈0.95(5). We also discuss mechanisms which would lead to a nonzero exponent θ for general spin models with quenched random fields.

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Charge avalanches and depinning in the Coulomb glass: The role of long-range interactions

Cited by 3 publications

References 60 publications

Marginal Stability in Structural, Spin, and Electron Glasses

Marginal Stability in Structural, Spin, and Electron Glasses

Room-temperature single dopant atom quantum dot transistors in silicon, formed by field-emission scanning probe lithography

Gaps between avalanches in one-dimensional random-field Ising models

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