Charge carrier coherence and Hall effect in organic semiconductors

Yi, Hyunjung; Gartstein, Yuri N.; Podzorov, Vitaly

doi:10.1038/srep23650

Cited by 88 publications

(100 citation statements)

References 28 publications

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“…The parameter α has initially been introduced to highlight the mismatch between charges generated by gating and taking place in the Hall effect. It now appears, in the light of the recent results of Podzorov et al, to contain information about different phenomena . To summarize this section, Hall effect measurements are valuable to confirm the good performances of newly synthesized materials exhibiting charge carrier mobilities in excess of 10 cm 2 V −1 s −1 but also to discriminate the relative contribution of delocalized and localized states present in materials exhibiting mixed transport properties.…”

Section: Charge Transportmentioning

confidence: 89%

“…Indeed, in the event of mixed transport containing hopping events, the hopping carriers will respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers, leading to an underdeveloped Hall effect (incorrect estimate of the charge carrier mobility and density). A model recently developed by Podzorov et al allows proper interpretation of Hall measurements in that case . In such a context, it is clear that much has yet to be learnt from Hall effect measurements.…”

Section: Charge Transportmentioning

confidence: 99%

See 1 more Smart Citation

Molecular Semiconductors for Logic Operations: Dead‐End or Bright Future?

et al. 2020

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The field of organic electronics has been prolific in the last couple of years, leading to the design and synthesis of several molecular semiconductors presenting a mobility in excess of 10 cm2 V−1 s−1. However, it is also started to recently falter, as a result of doubtful mobility extractions and reduced industrial interest. This critical review addresses the community of chemists and materials scientists to share with it a critical analysis of the best performing molecular semiconductors and of the inherent charge transport physics that takes place in them. The goal is to inspire chemists and materials scientists and to give them hope that the field of molecular semiconductors for logic operations is not engaged into a dead end. To the contrary, it offers plenty of research opportunities in materials chemistry.

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Section: Charge Transportmentioning

confidence: 89%

Section: Charge Transportmentioning

confidence: 99%

Molecular Semiconductors for Logic Operations: Dead‐End or Bright Future?

et al. 2020

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“…The central novel finding of our work is an observation that the Hall effect in polycrystalline OFETs is systematically “underdeveloped”, even though the longitudinal mobility is high. The Hall effect is called underdeveloped, when the Hall mobility, μ Hall , is substantially smaller than the longitudinal field‐effect mobility, μ FET , (μ Hall < μ FET ), and, respectively, the Hall carrier density, n Hall , is systematically greater than the capacitively defined (total) carrier density, n FET , induced in the accumulation channel ( n Hall > n FET ) . To understand the mechanism of this effect, besides blends, we have also investigated high‐quality polycrystalline rubrene thin films with a large grain size previously developed by Fusella et al These films can be viewed as an ideal polycrystalline organic semiconductor due to the very large grain size of up to ≈1 mm and crystallographically well‐defined grain boundaries, with a highly compact film morphology extended over macroscopically large areas (up to 1 cm 2 ).…”

Section: Introductionmentioning

confidence: 99%

Hall Effect in Polycrystalline Organic Semiconductors: The Effect of Grain Boundaries

Choi

Paterson

Fusella

et al. 2019

Adv Funct Materials

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Highly crystalline thin films in organic semiconductors are important for applications in high-performance organic optoelectronics. Here, the effect of grain boundaries on the Hall effect and charge transport properties of organic transistors based on two exemplary benchmark systems is elucidated: (1) solution-processed blends of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C 8 -BTBT) small molecule and indacenodithiophene-benzothiadiazole (C 16 IDT-BT) conjugated polymer, and (2) large-area vacuum evaporated polycrystalline thin films of rubrene (C 42 H 28 ). It is discovered that, despite the high field-effect mobilities of up to 6 cm 2 V −1 s −1 and the evidence of a delocalized band-like charge transport, the Hall effect in polycrystalline organic transistors is systematically and significantly underdeveloped, with the carrier coherence factor α < 1 (i.e., yields an underestimated Hall mobility and an overestimated carrier density). A model based on capacitively charged grain boundaries explaining this unusual behavior is described. This work significantly advances the understanding of magneto-transport properties of organic semiconductor thin films.

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“…Here, we take advantage of the recently developed high-resolution ac-Hall effect measurement technique (19,20), in conjunction with photoconductivity (PC) and photoluminescence (PL) spectroscopies, to be applied to several hybrid and all-inorganic perovskite single crystals. The studied compounds have different (organic or inorganic) cations, including methylammonium (MA + ), formamidinium (FA + ) and cesium (Cs + ).…”

Section: Introductionmentioning

confidence: 99%

Experimental Demonstration of Correlated Flux Scaling in Photoconductivity and Photoluminescence of Lead-Halide Perovskites

Irkhin

Joshi

et al. 2018

Phys. Rev. Applied

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Lead-halide perovskites attracted attention as materials for high-efficiency solar cells and light emitting applications. Among their attributes are solution processability, high absorbance in the visible spectral range and defect tolerance, as manifested in long photocarrier lifetimes and diffusion lengths. The microscopic origin of photophysical properties of perovskites is, however, still unclear and under debate. Here, we have observed an interesting universal scaling behavior in a series of (hybrid and all-inorganic) perovskite single crystals investigated via simultaneous measurements of the Hall effect, photoconductivity and photoluminescence. A clear correlation between photoconductivity and photoluminescence as functions of the incident photon flux is observed. While photoconductivity exhibits a crossover in the power-law dependence between power exponents 1 and 1/2, photoluminescence exhibits a crossover between power exponents 2 and 3/2. This correlation is found in all the studied compounds irrespective of the cation type (organic or inorganic) or crystallographic phases. We propose phenomenological microscopic mechanisms that explain these interesting non-trivial power exponents and crossovers between them in this broad class of lead-halide perovskites. † Current address: Micron.Inc, Boise, Idaho, USA.

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Charge carrier coherence and Hall effect in organic semiconductors

Cited by 88 publications

References 28 publications

Molecular Semiconductors for Logic Operations: Dead‐End or Bright Future?

Molecular Semiconductors for Logic Operations: Dead‐End or Bright Future?

Hall Effect in Polycrystalline Organic Semiconductors: The Effect of Grain Boundaries

Experimental Demonstration of Correlated Flux Scaling in Photoconductivity and Photoluminescence of Lead-Halide Perovskites

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