Charge carrier dynamics in the picosecond time domain in photoelectrochemical cells

Bitterling, K.; Willig, F.

doi:10.1016/0022-0728(86)80519-8

Cited by 41 publications

(44 citation statements)

References 21 publications

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“…We have analyzed this contribution quantitatively by applying a time dependent diffusion model to describe js(t) for this contribution. Thus, we have derived from the experiment the diffusion transient of minority carriers at an n-GaAs electrode which agrees with bulk data for the minority carriers for sufficient band bending in blocking direction [6]. Fig .…”

Section: Experimental Let Signals At Semiconductor Electrodesmentioning

confidence: 50%

“…(6)). In principle this signal contains all the information on the laser induced changes in the charge distribution in the system.…”

Section: Model For Laser Induced Electrical Transients (Let)mentioning

confidence: 93%

“…This is the early time window t < r with the RC constant of the circuit in the range of 10 ns, The fast rise is bandwidth limited and the slower superimposed rise is time resolved and due to the minority carrier diffusion transient. The smooth drawn out curve is the calculated response U M [6] further slower rise in Fig. 5 that is superimposed on the early fast rise.…”

Section: Experimental Let Signals At Semiconductor Electrodesmentioning

confidence: 98%

“…Absorption of light with suitable wavelengths leads in a photoelectrochemical system to the spatial separation of electron-hole pairs. This occurs in a variety of systems: 1. photoemission of electrons from a metal electrode into an electrolyte [1,2], 2. charge carrier injection from the electronic excited state of an adsorbed molecule into the depletion layer of a wide band gap semiconductor [3,4], and 3. into the surface layer of an organic insulating crystal such as anthracene [5,6], 4. electron-hole pair generation in the surface layer of a semiconductor with subsequent discharge of the minority carriers into the electrolyte [6,7], 5. generation of excitons in the surface layer of an organic crystal with subsequent charge transfer at the interface [8], 6. lightdriven electron-hole pair separation in a functionalized membrane in contact with an electrolyte [9,10].…”

Section: Introductionmentioning

confidence: 99%

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Laser Induced Electrical Transients at Semiconductor Electrodes

Willig

1988

Ber Bunsenges Phys Chem

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Electrical Properties / Interfaces / Photoelectrochemistry / Semiconductors / Transients Laser-induced electrical transients (LET) are described in a model with two capacitors in series, two current source terms, a measuring resistor, and a resistor for the system. Calculated and experimental LET signals at semiconductor electrodes are shown for characteristic kinetic situations in three different time windows t < T, t comparable to T, and t > T, where T represents the RC response time of the circuit.

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Section: Experimental Let Signals At Semiconductor Electrodesmentioning

confidence: 50%

“…(6)). In principle this signal contains all the information on the laser induced changes in the charge distribution in the system.…”

Section: Model For Laser Induced Electrical Transients (Let)mentioning

confidence: 93%

Section: Experimental Let Signals At Semiconductor Electrodesmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

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Laser Induced Electrical Transients at Semiconductor Electrodes

Willig

1988

Ber Bunsenges Phys Chem

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“…The initial photopotential equals [To = QJC~c [1] Inverse proportionality of the initial signM to the spacecharge capacitance was mentioned in several articles (for example Ref. 11,[21][22][23]. For uniform doping concentration, the space-charge capacitance C~c is given by [2] Combining Eq.…”

Section: Resultsmentioning

confidence: 99%

An Investigation of Charge‐Transfer Processes at n ‐ TiO2 by Using a Short Laser Pulse

Ponomarev

Nogami

Бабенко

1993

J. Electrochem. Soc.

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The charge-transfer processes at illuminated n-TiO2 electrodes have been investigated using a nitrogen laser. The initial photopotential to the second power linearly depends on electrode potential for poly-and single-crystalline electrodes. It allows us to use photopotential measurements to determine the flatband potential. For polycrystal]ine electrodes far from the flatband potential, the characteristic time of photopotential decay (v) is determined by electric discharge through an external circuit (7 = RC). The dependence of 1/T 2 vs. E is a straight line, but the intersection with a potential axis is shifted in the cathodic direction by 0.4 V from the flatband potential. This is explained by the assumption that there is some capacitance connected in series with space-charge capacitance. From the analysis of the photopotential decay curves for a polycrystalline electrode, the rate of charge transfer from a semiconductor to an electrolyte solution was estimated to be less than 102 s -I. Near the flatband potential, the recombination photocurrent with relatively slow time decay was observed. The model which provides the explanation of these phenomena is proposed and discussed.

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Native and Surface Modified Semiconductor Nanoclusters

Kamat

1996

Progress in Inorganic Chemistry

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Charge carrier dynamics in the picosecond time domain in photoelectrochemical cells

Cited by 41 publications

References 21 publications

Laser Induced Electrical Transients at Semiconductor Electrodes

Laser Induced Electrical Transients at Semiconductor Electrodes

An Investigation of Charge‐Transfer Processes at n ‐ TiO2 by Using a Short Laser Pulse

Native and Surface Modified Semiconductor Nanoclusters

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