2022
DOI: 10.1021/acsphotonics.2c01132
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Charge Carrier Dynamics of Organic Cation-Treated Perovskites Probed with Time-Resolved Microwave Conductivity

Abstract: Metal halide perovskites have emerged as a set of promising optoelectronic materials benefiting from their outstanding optoelectronic properties and unprecedented success in photovoltaics. Recent studies have suggested that mixing lower-dimensional A-site cations within perovskites helps mitigate this environmental and phase instability for 3D perovskites. However, the charge carrier transport properties in mixed 2D/3D perovskites are still not fully understood. In this work, charge carrier mobilities and reco… Show more

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Cited by 17 publications
(14 citation statements)
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“…Information regarding the recombination processes can be obtained with the help of a probe signal whose modulations vary linearly with carrier density . Examples of such pump–probe techniques are transient absorption , (TA), diffuse reflectance (DR), microwave conductivity (MC), etc. On the other hand, photoluminescence (PL) varies as the product of carrier densities and does not involve any probe signal.…”
Section: Introductionmentioning
confidence: 99%
“…Information regarding the recombination processes can be obtained with the help of a probe signal whose modulations vary linearly with carrier density . Examples of such pump–probe techniques are transient absorption , (TA), diffuse reflectance (DR), microwave conductivity (MC), etc. On the other hand, photoluminescence (PL) varies as the product of carrier densities and does not involve any probe signal.…”
Section: Introductionmentioning
confidence: 99%
“…We can obtain the product of the yield and mobility, ϕΣμ, from the initial TRMC amplitude, where ϕ is the charge-carrier yield (number of free carriers per incident photon) and Σμ is the sum of electron and hole mobilities. The change in photoconductance, Δ G , can be determined, given by , ϕ Σ μ = Δ G e n ph = Δ G I 0 F A e β where I 0 is the laser intensity, F A is the fraction of laser light absorbed, e is the electronic charge, and β is the ratio between the narrow and broad inner dimensions of the cavity. Notably, both Bi 2 S 3 -Bi and Bi 2 S 3 -S exhibited enhanced carrier mobility relative to that of pristine Bi 2 S 3 .…”
mentioning
confidence: 99%
“…The recent development of bismuth-based chalcogenide semiconductors has predominantly centered on device-oriented methodologies, relying heavily on empirical techniques in both materials and device engineering . Consequently, there is a pressing demand for perspectives on the mechanisms of charge-carrier generation, recombination, and transport to enhance our comprehensive understanding of the interplay between optoelectronic properties and device operation. , The acquisition of such profound insights will furnish indispensable feedback for the optimization of devices and facilitate the advancement of this field. Attaining a more detailed understanding of the physics that underlie charge-carrier dynamics and transport in chalcogenide materials is pivotal in disclosing the fundamental limitations and potentialities of these thin films for various optoelectronic applications. , However, the optoelectronic characterization of the bismuth-based chalcogenides has barely been reported.…”
mentioning
confidence: 99%
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