Charge-carrier properties in synthetic single-crystal diamond measured with the transient-current technique

Pernegger, H.; Roe, S.; Weilhammer, P.; Eremin, V.; Frais-Kölbl, H.; Griesmayer, E.; Kagan, H.; Schnetzer, S.; Stone, R.; Trischuk, W.; Twitchen, Daniel J.; Whitehead, Andrew L.

doi:10.1063/1.1863417

Cited by 201 publications

(114 citation statements)

References 13 publications

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“…͑1͒, which is in the order of 15-30 ns. Assuming typical mobility values reported in the recent literature of more than 1000 cm 2 V −1 s −1 , 3,19,20 it is expected that the transit time T R will be shorter than the time resolution of our system at bias voltages larger than ±50 V for both electrons and holes, which is in agreement with our observation.…”

Section: ␣-Particle Spectroscopysupporting

confidence: 82%

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Mapping of polarization and detrapping effects in synthetic single crystal chemical vapor deposited diamond by ion beam induced charge imaging

Lohstroh¹,

Sellin²,

Wang³

et al. 2007

Journal of Applied Physics

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Diamond has been regarded as a promising radiation detector material for use as a solid state ionizing chamber for decades. The parameters degrading the charge transport from what is expected from an ideal crystal are still not completely understood. Recently, synthetic chemical vapor deposited ͑CVD͒ single crystal diamond has become available, offering the opportunity to study the properties of synthesized material independent of grain boundaries. We have studied the charge transport of a synthetic single crystal diamond with ␣-particle induced charge transients as a function of temperature and established the presence of a shallow hole trap with an activation energy of 0.29± 0.02 eV in some parts of the detector. Ion beam induced charge imaging has been used to study the spatial variations of the charge transport in a synthetic single crystal diamond. Pulses influenced by the shallow hole trap had their origin close to the substrate/CVD interface of the sample. They could be clearly distinguished from pulses affected by reduced charge carrier velocities due to polarization phenomena, which varied systematically with the growth direction of the CVD diamond material.

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Section: ␣-Particle Spectroscopysupporting

confidence: 82%

“…3,19,20 Assuming a typical device with a maximum thickness d of 0.5 mm and an electric field strength of more than 1 kV cm −1 , it follows that the transit time can be expected to be less than 50 ns.…”

Section: ͑1͒mentioning

confidence: 99%

Mapping of polarization and detrapping effects in synthetic single crystal chemical vapor deposited diamond by ion beam induced charge imaging

Lohstroh¹,

Sellin²,

Wang³

et al. 2007

Journal of Applied Physics

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“…Diamond polarization is modifying the internal electrical field, which can be measured using the TransientCurrent-Technique (TCT) [12,13]. The electrical field modification is affecting also the sensor efficiency, therefore CCE measurements were done as well.…”

Section: Transient Current Technique (Tct)mentioning

confidence: 99%

Severe signal loss in diamond beam loss monitors in high particle rate environments by charge trapping in radiation‐induced defects

Kassel¹,

Guthoff

Dabrowski

2016

Physica Status Solidi (a)

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The Beam Condition Monitoring Leakage (BCML) system is a beam monitoring device in the CMS experiment at the LHC. As detectors 32 poly-crystalline (pCVD) diamond sensors are positioned in rings around the beam pipe. Here high particle rates occur from the colliding beams scattering particles outside the beam pipe. These particles cause defects, which act as traps for the ionization, thus reducing the charge collection efficiency (CCE). However, the loss in CCE was much more severe than expected from low rate laboratory measurements and simulations, especially in single-crystalline (sCVD) diamonds, which have a low initial concentration of defects. After an integrated luminosity of a few fb −1 corresponding to a few weeks of LHC operation, the CCE of the sCVD diamonds dropped by a factor of five or more and quickly approached the poor CCE of pCVD diamonds. The reason why in real experiments the CCE is much worse than in laboratory experiments is related to the ionization rate.At high particle rates the trapping rate of the ionization is so high compared with the detrapping rate, that space charge builds up. This space charge reduces locally the internal electric field, which in turn increases the trapping rate and recombination and hence reduces the CCE in a strongly non-linear way. A diamond irradiation campaign was started to investigate the rate dependent electrical field deformation with respect to the radiation damage. Besides the electrical field measurements via the Transient Current Technique (TCT), the CCE was measured. The experimental results were used to create an effective deep trap model that takes the radiation damage into account. Using this trap model the rate dependent electrical field deformation and the CCE were simulated with the software SILVACO TCAD. The simulation, tuned to rate dependent measurements from a strong radioactive source, was able to predict the nonlinear decrease of the CCE in the harsh environment of the LHC, where the particle rate was a factor 30 higher.

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“…Diamond detectors based on CVD diamond can be efficiently used as neutron monitors due to the combination of such properties as: subnanosecond time response [1,2], high irradiation resistance [3,4], the possibility of discrimination of different particle interaction types [5,6]. The detection of fast neutrons with diamond detectors is achievable due to the nuclear reactions of neutrons with carbon nuclei [7].…”

Section: Introductionmentioning

confidence: 99%

The¹³C(n,α₀)¹⁰Be cross section at 14.3 MeV and 17 MeV neutron energy

et al. 2017

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Abstract. At nuclear fusion reactors, CVD diamond detectors are considered an advantageous solution for neutron flux monitoring. For such applications the knowledge of the cross section of neutron-induced nuclear reactions on natural carbon are of high importance. Especially the (n,α 0 ) reactions, yielding the highest energy reaction products, are of relevance as they can be clearly distinguished in the spectrum. The 13 C(n,α 0 ) 10 Be cross section was measured relative to 12 C(n,α 0 ) 9 Be at the Van de Graaff facility of EC-JRC Geel, Belgium, at 14.3 MeV and 17.0 MeV neutron energies. The measurement was performed with an sCVD (single-crystal Chemical Vapor Deposition) diamond detector, where the detector material acted simultaneously as sample and as sensor. A novel data analysis technique, based on pulse-shape discrimination, allowed an efficient reduction of background events. The results of the measurement are presented and compared to previously published values for this cross-section.

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Charge-carrier properties in synthetic single-crystal diamond measured with the transient-current technique

Cited by 201 publications

References 13 publications

Mapping of polarization and detrapping effects in synthetic single crystal chemical vapor deposited diamond by ion beam induced charge imaging

Mapping of polarization and detrapping effects in synthetic single crystal chemical vapor deposited diamond by ion beam induced charge imaging

Severe signal loss in diamond beam loss monitors in high particle rate environments by charge trapping in radiation‐induced defects

The¹³C(n,α₀)¹⁰Be cross section at 14.3 MeV and 17 MeV neutron energy

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Charge-carrier properties in synthetic single-crystal diamond measured with the transient-current technique

Cited by 201 publications

References 13 publications

Mapping of polarization and detrapping effects in synthetic single crystal chemical vapor deposited diamond by ion beam induced charge imaging

Mapping of polarization and detrapping effects in synthetic single crystal chemical vapor deposited diamond by ion beam induced charge imaging

Severe signal loss in diamond beam loss monitors in high particle rate environments by charge trapping in radiation‐induced defects

The13C(n,α0)10Be cross section at 14.3 MeV and 17 MeV neutron energy

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The¹³C(n,α₀)¹⁰Be cross section at 14.3 MeV and 17 MeV neutron energy