2017
DOI: 10.1021/acs.jpcc.7b01577
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Charge Carrier Trapping Processes in RE2O2S (RE = La, Gd, Y, and Lu)

Abstract: Two different charge carrier trapping processes have been investigated in RE2O2S:Ln3+ (RE = La, Gd, Y, and Lu; Ln = Ce, Pr, and Tb) and RE2O2S:M (M = Ti4+ and Eu3+). Cerium, praseodymium and terbium act as recombination centers and hole trapping centers while host intrinsic defects provide the electron trap. The captured electrons released from the intrinsic defects recombine at Ce4+, Pr4+, or Tb4+ via the conduction band. On the other hand, Ti4+ and Eu3+ act as recombination centers and electron trapping cent… Show more

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Cited by 45 publications
(50 citation statements)
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“…The holes liberate from Ce 4+ earlier than electrons from Sm 2+ and recombine with Sm 2+ generating Sm 3+ 4f-4f emission. The other two examples are from studies by Luo et al on Gd 1-x La x AlO 3 7 and RE 2 O 2 S. 2 The trap depth of the Tb 3+ hole trapping center in Gd 1-x La x AlO 3 can be adjusted by changing x leading to valence band energy changes. In RE 2 O 2 S:Ti 4+ a hole release process leading to Ti 4+ charge transfer emission was identified.…”
Section: Introductionmentioning
confidence: 99%
“…The holes liberate from Ce 4+ earlier than electrons from Sm 2+ and recombine with Sm 2+ generating Sm 3+ 4f-4f emission. The other two examples are from studies by Luo et al on Gd 1-x La x AlO 3 7 and RE 2 O 2 S. 2 The trap depth of the Tb 3+ hole trapping center in Gd 1-x La x AlO 3 can be adjusted by changing x leading to valence band energy changes. In RE 2 O 2 S:Ti 4+ a hole release process leading to Ti 4+ charge transfer emission was identified.…”
Section: Introductionmentioning
confidence: 99%
“…Persistent luminescence observed in different material systems is caused by a gradual release of charged carriers from shallow trapping centers to deeper ones, whereby enough thermal energy (which is controlled by the trap depth) is available to help the captured carriers escape . Shallow traps have a tendency for a higher afterglow intensity and a shorter duration.…”
Section: Introductionmentioning
confidence: 99%
“…When studying the effect of various dopants in a host material, this method is an easy and powerful method. Examples are given by Lecointre et al [31] for YPO 4 :Pr 3+ ,Ln 3+ (Ln = Nd, Er, Ho, Dy) and Luo et al [32] for RE 2 O 2 S (RE = La, Gd, Y, and Lu).…”
Section: Theoretical Backgroundmentioning
confidence: 99%