Charge-collection dynamics of AlSb-InAs-GaSb resonant interband tunneling diodes (RITDs) [for MOBILE logic circuits]

Abstract

Time-resolved charge-collection measurements performed on AlSb/InAs/GaSb resonant interband tunneling diodes (RITDs) with pulsed laser excitation exhibit complex behavior as a function of the device operating point. A model considering conventional charge-collection principles in combination with transient band-bending effects is proposed to describe the experimental results. In the proposed model, a transient distortion of the band structure of the device (transient band bending) induced by holes trapped in the GaSb valence band well modulates the dc current through the RITD. The manner in which this transient modulation is manifested in the experimental observable depends sensitively on the operating point of the device, giving rise to qualitatively different temporal signatures under different dc bias conditions. Index Terms-Charge collection, high electron mobility transistor (HEMT), monostable-bistable transition logic element (MOBILE), resonant interband tunneling diode (RITD), resonant tunneling diode (RTD), single-event effects (SEEs), single-event upset (SEU), transient band bending.

Radiation Effects in Iii-v Semiconductor Electronics

“…Conventional charge-collection principles alone are insufficient to explain the chargecollection measurements of the AlSb/InAs/GaSb RITDs. 111 A model that considers transient band-bending effects combined with conventional charge-collection considerations provides a consistent interpretation of the results over a range of bias conditions and laser pulse energy. 111 In terms of SEE vulnerability, these measurements suggest that RITDs may be effectively immune to single-event phenomena when compared to their HEMT and HBT counterparts, but additional measurements are required to verify this conclusion.…”

“…This figure shows the laser-induced charge-collection transients measured for an AlSb/InAs/GaSb resonant interband tunneling diode (RITD) at two different operating points, one near the peak of the IV curve, and one near the valley. 111 These data reveal the complex and unique character of the charge-collection processes of the RITD. A striking aspect of these data is the distinct difference in the dynamical response at the two operating points.…”

Study of Surface Treatments on InAs/GaSb Superlattice LWIR Detectors

“…Gallium antimonide (GaSb)-based semiconductor alloys have a wide range of optoelectronic device applications, such as lasers, 1,2 thermo-photovoltaic cells, 3 tunneling diodes, 4 and photodetectors. 5,6 The lattice parameter a 0 of GaSb nearly matches that of the solid solutions of ternary and quaternary III-V compounds commonly referred to as the 6.1-Å semiconductor family, which includes, besides GaSb with a 0 of 6.0954 Å , InAs with a 0 equal to 6.0584 Å and AlSb with a 0 of 6.1355 Å , as illustrated in Fig.…”

SEU Mitigation for SRAM Based on Dual Redundancy Check Method

“…Depending on the mechanism of the different effect, SEE can be divided into the SEU [8,9], single event latch-up [10,11], single event function interrupt [12], and other types [13,14]. Among them, the SEU is a charged radiation effect that occurs in monostable or bistable logic devices and logic circuit [15]. Its main phenomenon is that high energy particles in spatial have collision with the sensitive region of semiconductor device, and the created charges which around the heavy ion trajectory were collected by sensitive electrode.…”