Charge collection in silicon detectors for strongly ionizing particles

Seibt, W.; Sundstrom, Karl-Ragnar; Tove, PA

doi:10.1016/0029-554x(73)90496-5

Cited by 110 publications

(38 citation statements)

References 16 publications

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“…Given the ∼ 15 ns average value of the rise-times, this translates into a ∼ 1.3% difference. Therefore, since to a first-order approximation both the transit-time and the plasma time (see, for example, the analytical estimate in [26]) depend linearly on the depletion voltage and hence on resistivity, a given requirement on signals rise-time spread directly translates into a non-uniformity requirement. The presently available quality of off-the-shelf silicon ingots and detectors (about 15%) is thus clearly not adequate and quality-check procedures should at least be employed.…”

Section: Effect Of Doping Non-uniformitymentioning

confidence: 99%

The FAZIA project in Europe: R&D phase

Bougault¹,

Poggi²,

Barlini³

et al. 2014

Eur. Phys. J. A

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Abstract. The goal of the FAZIA Collaboration is the design of a new-generation 4π detector array for heavy-ion collisions with radioactive beams. This article summarizes the main results of the R&D phase, devoted to the search for significant improvements of the techniques for charge and mass identification of reaction products. This was obtained by means of a systematic study of the basic detection module, consisting of two transmission-mounted silicon detectors followed by a CsI(Tl) scintillator. Significant improvements in ΔE-E and pulse-shape techniques were obtained by controlling the doping homogeneity and the cutting angles of silicon and by putting severe constraints on thickness uniformity. Purposely designed digital electronics contributed to identification quality. The issue of possible degradation related to radiation damage of silicon was also addressed. The experimental activity was accompanied by studies on the physics governing signal evolution in silicon. The good identification quality obtained with the prototypes during the R&D phase, allowed us to investigate also some aspects of isospin physics, namely isospin transport and odd-even staggering. Now, after the conclusion of the R&D period, the FAZIA Collaboration has entered the demonstrator phase, with the aim of verifying the applicability of the devised solutions for the realization of a larger-scale experimental set-up.

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Section: Effect Of Doping Non-uniformitymentioning

confidence: 99%

The FAZIA project in Europe: R&D phase

Bougault¹,

Poggi²,

Barlini³

et al. 2014

Eur. Phys. J. A

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“…Carriers have to move to the surface by ambipolar diffusion since the external field is shielded inside the plasma column. Another source of the erosion current as modeled by Seibt et al [13] comes from the space charge limited current (SCLC) from the end of the plasma column initially located at the end of~e track or the end of the detector layer whichever is shorter. The column length becomes shortened with time by the SCLC.…”

Section: 4e+4 -------------mentioning

confidence: 99%

Improved charge collection of the buried p-i-n a-Si:H radiation detectors

Fujieda

Cho

Conti

et al. 1990

IEEE Trans. Nucl. Sci.

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Charge collection in hydrogenated amorphous silicon (aSi:H) radiation detectors is improved for high LET particle detection by adding thin intrinsic layers to the usual p-i-n structure. This buried p-i-n structure enables us to apply higher bias and the electric field is enhanced. When irradiated by 5.8 MeV ex particles, the 5.7 Jll1l thick buried p-i-n detector with bias 300V gives a signal size of 60,000 electrons, compared to about 20,000 electrons with the simple p-i-n detectors. The improved charge collection in the new structure is discussed. The capability of tailoring the field profile by doping a-Si:H opens a way to some interesting device structures.

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“…In all existing studies of the plasma time in semiconductor detectors, the mobility is treated as a constant [12,24,29]. This is not necessarily the case when the charge carrier concentration is too high.…”

Section: Effect Of Mobility On Plasma Timementioning

confidence: 99%

“…The time needed for total disintegration of this plasma region is called the plasma time, which is known as the second component of the pulse rise time. The plasma time depends on the initial density and radius of the plasma-like cloud, on the diffusion constant for charge carriers, and on the strength of electric field [9,[12][13][14]. Both drift time and plasma time are responsible for the pulse rise time in the charge collection.…”

Section: Introductionmentioning

confidence: 99%

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Discrimination of nuclear and electronic recoil events using plasma effect in germanium detectors

2016

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We report a new method of using the plasma time difference, which results from the plasma effect, between the nuclear and electronic recoil events in high-purity germanium detectors to distinguish these two types of events in the search for rare physics processes. The physics mechanism of the plasma effect is discussed in detail. A numerical model is developed to calculate the plasma time for nuclear and electronic recoils at various energies in germanium detectors. It can be shown that under certain conditions the plasma time difference is large enough to be observable. The experimental aspects in realizing such a discrimination in germanium detectors is discussed.

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Charge collection in silicon detectors for strongly ionizing particles

Cited by 110 publications

References 16 publications

The FAZIA project in Europe: R&D phase

The FAZIA project in Europe: R&D phase

Improved charge collection of the buried p-i-n a-Si:H radiation detectors

Discrimination of nuclear and electronic recoil events using plasma effect in germanium detectors

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