and among all systems studied, only one was found to exhibit metallic interfacial electrical conductivity. [ 5 ] We investigate heterostructures formed by a rubrene (tetraphenyltetracene) single crystal and an F 16 CoPc (fl uorinated Co-phthalocyanine) fi lm by means of charge transport and photoelectron spectroscopy. We fi nd that the F 16 CoPc/rubrene interface has signifi cantly enhanced electrical conductance. With the exception of TTF/TCNQ, [ 5 ] the room temperature resistivity of this interface is the lowest reported so far, and temperature dependent measurements show a decrease of the resistivity upon cooling (down to ≈130 K) indicating the occurrence of band-like transport. [20][21][22][23][24][25][26][27][28][29][30] By means of Hall effect measurements, we establish that charge transport is dominated by holes in the rubrene crystal and we fi nd that the value of the hole mobility virtually coincides with that measured in a class of recently investigated organic interfaces based on F x -TCNQ (fl uorinated tetracyanoquinodimethane) and rubrene single crystals. [ 13 ] As compared to all interfaces studied in this family, on the contrary, the hole density is higher in F 16 CoPc/rubrene, which explains the low value of the F 16 CoPc/rubrene resistivity. The results of the transport measurements are corroborated by Kelvin probe microscopy experiments that enable the alignment of the chemical potential across the F 16 CoPc/rubrene interface to be determined, and confi rm that a large transfer between the two materials should be expected. Finally, we perform photoelectron spectroscopy (PES) measurements on thin fi lm F 16 CoPc/rubrene heterostructures to show that the charge transfer at the interface involves electronic orbitals centered on the magnetic Cobalt ion of the F 16 CoPc molecules. We therefore conclude that the investigated system does allow the high electrical conductivity with the presence of magnetic ions to be combined at the interface.F 16 CoPc/rubrene interface devices were formed on a polydimethylsiloxane substrate. First, a rubrene single crystal (grown by physical vapor transport) was laminated on the substrate and then a 70-nm F 16 CoPc fi lm was evaporated (under high vacuum conditions) on top of the rubrene crystal. The transport properties of rubrene single crystals (identical to those used to assemble the interfaces) were investigated via fi eldeffect transistor (FET) measurements [ 31 ] as a characterization step, and showed a room temperature mobility between 12 and 20 cm 2 V −1 s −1 in devices in which the crystal was suspended on top of a gate electrode, in agreement with previous studies. [32][33][34] In order to maintain its quality, the rubrene crystal was kept at room temperature throughout the deposition of the evaporated fi lm. As a result, the morphology of the F 16 CoPc fi lm was expected to be far from ideal, as indeed indicated by atomic force microscopy measurements showing F 16 CoPc fi lms with rather rough surfaces, consisting of small grains with irregular orientation...