Charge-coupled imaging devices: Experimental results

Tompsett, M.F.; Amelio, G. F.; Bertram, W.J.; Buckley, Robert; McNamara, W.J.; Mikkelsen, J. C.; Sealer, D.A.

doi:10.1109/t-ed.1971.17321

Cited by 106 publications

(15 citation statements)

References 2 publications

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“…In summary, 25 years after the demonstration of the first CCD image sensor [43], image sensing has come of age, not only concerning the ever-increasing size and dropping price of image sensors, but primarily because today image sensing can be regarded as being part of solving an optical measurement problem. A wide range of integrated building blocks exist or can be custom developed, with which an optimum solution with just the needed functionality can be realized, placing the functionality exactly there, where it makes the most sense in terms of technical or economic requirements.…”

Section: Increasing the Functionality Of Image Sensorsmentioning

confidence: 99%

Image Sensors

Seitz¹,

Knop²

1996

Sensors Update

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Section: Increasing the Functionality Of Image Sensorsmentioning

confidence: 99%

Image Sensors

Seitz¹,

Knop²

1996

Sensors Update

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“…By recording the location and size of the component materials and other related characteristics, we can send the data to the alignment system. The method to record the measurement information can be used for the industrial use camera (CCD Camera) [4] [5], laser, and mask aligner [6].…”

Section: Introductionmentioning

confidence: 99%

Multiple Alignment Stage for the Automatic Precision Alignment System

Tsau

Hong

Le³

et al. 2012

2012 International Symposium on Computer, Consumer and Control

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In this paper, we focus on electronics industry by now, in the manufacturing process, the servo system of the position of the alignment platen to do a study on methods of improving the software, which aims for the measurement system in the circuit board lamination. Characteristic marker can do accurate alignment. In our method, as do the prephotographic image pre-processing to detect and record the image in the location of the marker, then according to the measurement system captured images do wavelet transform and reduce the image size to improve performance, supplemented by 2: 1 candidate region search. That can do to enhance performance. By the actual experimental results can also be seen, this study found the correct way to position objects, and the time performance can finally improve.

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“…Charge-based systems using charge coupled devices (CCD's) can perform image-to-charge conversion, spatial shifting, analog storage and many of the linear signal processing functions necessary for vision [3,4,5,6,7,8]. This capability, in conjunction with an analog complementary metal oxide semiconductor (CMOS) process, should prove to be a very useful technology in implementing an integrated early vision system.…”

Section: Introductionmentioning

confidence: 99%

<title>CCD/CMOS process for integrated image acquisition and early vision signal processing</title>

Keast

Sodini

1990

Charge-Coupled Devices and Solid State Optical Sensors

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The novel technology resulting from the merger of a Charge Coupled Device (CCD) capability with a Complementary Metal Oxide Semiconductor (CMOS) process allows a large class of charge-based circuits to be integrated with CMOS circuits. CCD's can perform image-to-charge conversion, spatial shifting, analog storage, and many other linear signal processing functions necessary for vision. This capability, in conjunction with an analog CMOS process, should prove to be a very useful technology in implementing an integrated early vision system. This paper describes the technology development necessary for the integration of a four phase, buried-channel CCD capability in an existing 1.75 micron CMOS process. This enhancement requires an additional implant step, a second gate oxidation, a second level of polysilicon, and an additional etching step, adding two more lithographic levels to the 11 mask CMOS process. In addition, this process allows the fabrication of poly-to-poly capacitors with low voltage and temperature coefficients that are useful in many analog MOS applications. The process utilizes a 23nm gate dielectric for high transconductance and a 42nm poly-to-poly capacitor insulator. The poly-oxide provides excellent electrical isolation, and results in a C0 value which allows for good component matching. Experimental results are presented.

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Charge-coupled imaging devices: Experimental results

Cited by 106 publications

References 2 publications

Image Sensors

Image Sensors

Multiple Alignment Stage for the Automatic Precision Alignment System

<title>CCD/CMOS process for integrated image acquisition and early vision signal processing</title>

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