Charge detection modeling in solid-state image sensors

Pimbley, Joseph M.; Michon, G. J.

doi:10.1109/t-ed.1987.22921

Cited by 14 publications

(4 citation statements)

References 6 publications

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“…In fact, nanoSi is promising new generation of highly sensitive emitters, optical interconnects, fluorescent tags, markers, sensors or detectors for use in a number of UV intensive environments. UV intensive applications include deep space exploration; security, commercial, and consumer applications including military high temperature propulsion (rockets, missiles, fighter jets, and nuclear detonation) [16][17][18][19][20][21]; solar photovoltaics [22][23] as well as particle detectors in high energy accelerators [24]. Recent measurements however showed that nanoSi-based devices are limited as the material exhibits partial quenching, with time characteristic of minutes to hours depending on the UV intensity, beyond which it develops stability at ~ 50% level [25][26].…”

Section: Introductionmentioning

confidence: 99%

Experimental and theoretical study of ultraviolet-induced structural/optical instability in nano silicon-based luminescence

Malloy

Mantey

Maximenko

et al. 2018

Journal of Applied Physics

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Nano silicon is emerging as an active element for UV applications due to quantum confinement-induced widening of the Si bandgap, amenability to integration on Si and less sensitivity to temperature. NanoSi-based UV applications include deep space exploration; high temperature propulsion; solar photovoltaics; and particle detection in high energy accelerators. However, the viability of the technology is limited by a complex nanoSi optical quenching instability. Here, we examined the time dynamics of UV-induced luminescence of sub 3-nm nanoSi. The results show that luminescence initially quenches, but it develops a stability at ~ 50% level with a time characteristic of minutes. Upon isolation, partial luminescence recovery/reversibility occurs with time characteristics of hours. To discern the origin of the instability, we perform first principle atomistic calculations of the molecular / electronic structure in 1-nm Si particles as a function of Si structural bond expansion, using time dependent density functional theory (TD-DFT), with structural relaxation applied in both ground and excited states. For certain bond expansion/relaxation, the results show that the low-lying triplet state dips below the singlet ground state, providing a plausible long-lasting optical trap that may account for luminescence quenching as well as bond cleavage and irreversibility. Time dynamics of deviceoperation that accommodates the quenching/recovery time dynamics is suggested as a means to alleviate the instability and allow control of recovery, which promises to make it an effective alternative to UV-enhanced Si or metal-based wide-bandgap sensing technology.

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Section: Introductionmentioning

confidence: 99%

Experimental and theoretical study of ultraviolet-induced structural/optical instability in nano silicon-based luminescence

Malloy

Mantey

Maximenko

et al. 2018

Journal of Applied Physics

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show abstract

“…Commercial applications include industrial flame sensors, jet engine sensors, and consumer sensors for UV dosing. The interest in developing UV-based detection is that it may result in a lower rate of false alarm compared to infraredbased detection [1,2]. Detection of corona discharges of highvoltage transmission lines and arcs, inspection of UV leakage, monitoring UV curing and drying, controlling UV sterilization, and monitoring UV exposure in phototherapy are also among the applications.…”

Section: Introductionmentioning

confidence: 99%

“…Other novel approaches include the use of organics and phosphors. Silicon-based detection utilizes silicon carbide materials [3] and amorphous silicon alloys [1,2].…”

Section: Introductionmentioning

confidence: 99%