The
growing family of 2D materials led not long ago to combining
different 2D layers and building artificial systems in the form of
van der Waals heterostructures. Tailoring of heterostructure properties
postgrowth would greatly benefit from a modification technique with
a monolayer precision. However, appropriate techniques for material
modification with this precision are still missing. To achieve such
control, slow highly charged ions appear ideal as they carry high
amounts of potential energy, which is released rapidly upon ion neutralization
at the position of the ion. The resulting potential energy deposition
is thus limited to just a few atomic layers (in contrast to the kinetic
energy deposition). Here, we irradiated a freestanding van der Waals
MoS
2
/graphene heterostructure with 1.3 keV/amu xenon
ions in high charge states of 38, which led to nanometer-sized pores
that appear only in the MoS
2
facing the ion beam, but not
in graphene beneath the hole. Reversing the stacking order leaves
both layers undamaged, which we attribute to the high conductivity
and carrier mobility in graphene acting as a shield for the MoS
2
underneath. Our main focus is here on monolayer MoS
2
, but we also analyzed areas with few-layer structures and observed
that the perforation is limited to the two topmost MoS
2
layers, whereas deeper layers remain intact. Our results demonstrate
that in addition to already being a valuable tool for materials processing,
the usability of ion irradiation can be extended to mono- (or bi)layer
manipulation of van der Waals heterostructures when the localized
potential energy deposition of highly charged ions is also added to
the toolbox.