Charge fluctuations in SiO-₂Si interface

Abstract

On the homogeneous (as indicated by a small scanning mercury probe) regions of an Si0 2-Si structure the dependences of MIS conductance on frequency were measured. It was found that the equivalent parallel conductance due to surface states has a narrow peak in the Gtjw--w plot. This result contradicts the generally accepted view of small (50-500 A) surface potential fluctuations in Si0 2 -Si structures, enabling us to suppose that real 1\118 structures have separate (more than 10 pm) homogeneous regions approaching the ideal interface model. Therefore the concept of a geometrical spectrum of charge fluctuations has to be revised to emphasize large A components (like .. III frequency spectrum of noise).