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The energydensity and effective cross sections of a surface state continuum depend as a rule on the energy level of surface states in the forbidden band of a semiconductor. The effect of these dependences on the frequency behavior of the conductance and the capacitance of the continuum is calculated. The results arc compared with those for the models suggested before (fluctiiations, tunnelling). It is shown that for small surface potential fluctuations these values are of the same order. 3HepreTM'IeCKaH IlJOTHOCTb H 3@()elETLIBHbIC CeqeHIIFI 3aXBaTa KOHTLIHyyMa IIOBepXHOCT-3aIIpeU~eHHOfi 30He IIOJIyIIpOBO~[HPiKa. PaCCsMTaIIO BJILIHHEIe 3TMX 3aBMCLIMOCTe~~ Ha qaCTOTHbIe XapatiTepI4CTclh.H IIl)OBOflHMOCTU II CJltiOCTM KOHTHHYYMB. ~0.3y~eIiHbIe pe3yJIbTaTLI CpaBHeHbI C pe3yJlbTaTaMll pa3BMTbIX paHee MOfleJIefi (@ly€(TJ'aUMH, TyHHeJIHpOBaHMe) EI IIOKa3aH0, YTO lIpM BIBJIbIX I1)JlyKTyBUllfiX IIOBepXHOCTHOI'O IIOTeH-HbIx COCTORHEIU, HaK npamn 0 , ~~H M C I I T OT 311epre~~1qeciioro noaoxemn cocTominU B IiAaaa 3 T 0 BejlII~AHbI 03HOrO nopHnlia.

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No abstract

The spatial homogeneity of electrical characteristics in SiO2Si structures irradiated with fast electrons with a dose up to 1015 cm−2 is studied with a scanning mercury probe technique. It is shown that irradiation does not disturb the homogeneity of oxide film and interface, and in cases of structures having nonuniformly doped substrates it does not change the shape and the value of these inhomogeneities. At irradiation of the samples with charge distribution in oxide film fluctuating across the area, the amplitude of these fluctuations decreases proportionally to the growth in the mean value of the charge, the dependence on the irradiation dose being exponential.