On the frequency dependence of the surface state admittance

Abstract

The energydensity and effective cross sections of a surface state continuum depend as a rule on the energy level of surface states in the forbidden band of a semiconductor. The effect of these dependences on the frequency behavior of the conductance and the capacitance of the continuum is calculated. The results arc compared with those for the models suggested before (fluctiiations, tunnelling). It is shown that for small surface potential fluctuations these values are of the same order. 3HepreTM'IeCKaH IlJOTHOCTb H 3@()elETLIBHbIC CeqeHIIFI 3aXBaTa KOHTLIHyyMa IIOBepXHOCT-3aIIpeU~eHHOfi 30He IIOJIyIIpOBO~[HPiKa. PaCCsMTaIIO BJILIHHEIe 3TMX 3aBMCLIMOCTe~~ Ha qaCTOTHbIe XapatiTepI4CTclh.H IIl)OBOflHMOCTU II CJltiOCTM KOHTHHYYMB. ~0.3y~eIiHbIe pe3yJIbTaTLI CpaBHeHbI C pe3yJlbTaTaMll pa3BMTbIX paHee MOfleJIefi (@ly€(TJ'aUMH, TyHHeJIHpOBaHMe) EI IIOKa3aH0, YTO lIpM BIBJIbIX I1)JlyKTyBUllfiX IIOBepXHOCTHOI'O IIOTeH-HbIx COCTORHEIU, HaK npamn 0 , ~~H M C I I T OT 311epre~~1qeciioro noaoxemn cocTominU B IiAaaa 3 T 0 BejlII~AHbI 03HOrO nopHnlia.

Charge fluctuations in SiO-2Si interface

“…In such a model the broadening of a Gt/w-w curve depends on the IV value; thus the latter can be obtained from experiments. (More exactly, the 2k oIV value is obtained (Nakhmanson and Sevastianov 1980). For a Si-Si0 2 barrier the tunnelling parameter 2ko~(1 A)-l, so the W value appears in itngstroms immediately.)…”