2016
DOI: 10.3762/bjnano.7.5
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Charge injection and transport properties of an organic light-emitting diode

Abstract: SummaryThe charge behavior of organic light emitting diode (OLED) is investigated by steady-state current–voltage technique and impedance spectroscopy at various temperatures to obtain activation energies of charge injection and transport processes. Good agreement of activation energies obtained by steady-state and frequency-domain was used to analyze their contributions to the charge injection and transport. We concluded that charge is injected into the OLED device mostly through the interfacial states at low… Show more

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Cited by 34 publications
(21 citation statements)
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“…Among the target molecules in ultrasmooth films, Alq 3 and NPD films are semiconductors in an amorphous phase and have been drawing great attention as electron transport layer and hole transport layer in OLED, respectively [ 53 , 54 , 55 ]. To further evaluate the FCPVD method, the quality of the film prepared using the FCPVD method has been examined with fabricated electron transport layer-only devices (EOD, ITO/Alq 3 /Al), hole transport layer-only devices (HOD, ITO/NPD/Al), and heterojunction devices (ITO/NPD/Alq 3 /Al)—which are the basic types of OLEDs—by analyzing the current density–voltage characteristics.…”
Section: Resultsmentioning
confidence: 99%
“…Among the target molecules in ultrasmooth films, Alq 3 and NPD films are semiconductors in an amorphous phase and have been drawing great attention as electron transport layer and hole transport layer in OLED, respectively [ 53 , 54 , 55 ]. To further evaluate the FCPVD method, the quality of the film prepared using the FCPVD method has been examined with fabricated electron transport layer-only devices (EOD, ITO/Alq 3 /Al), hole transport layer-only devices (HOD, ITO/NPD/Al), and heterojunction devices (ITO/NPD/Alq 3 /Al)—which are the basic types of OLEDs—by analyzing the current density–voltage characteristics.…”
Section: Resultsmentioning
confidence: 99%
“…Furthermore, we observed the low charge injection region in Figure 3 b and Figure 4 b, below the voltage 2 V and 10 V, for Devices II and IV, respectively. That current density (J) follows the externally applied voltage (V) linearly, as shown in Equation (2), may be the reason behind this [ 22 ]. where en is the charge density ( e : elementary charge, n : charge carrier density), μ eff is the effective charge mobility, and L the organic film thickness.…”
Section: Resultsmentioning
confidence: 99%
“… where en is the charge density ( e : elementary charge, n : charge carrier density), μ eff is the effective charge mobility, and L the organic film thickness. It is notable that the effective charge mobility μ eff includes charge trapping phenomenon as follows [ 22 ]: where μ 0 is trap-free charge mobility, and n mob and n trap are mobile and trapped charge carrier densities, respectively. As shown in Figure 3 b, in the voltage region from 2 to 3 V an abrupt increase of the current is observed.…”
Section: Resultsmentioning
confidence: 99%
“…Finally, the last zone has m = 5 between 10 to 15 V is dominated by the trap filling process, and the increases of current causes a gradual filling of the states that represents the rise of the activation energy. After the filling of all interfacial states, the charges are injected over the interfacial barrier, which stands for second charge relaxation [53]. Figure 5b,c shows the luminance measured at 14 V for the IrQ(ppy) 2 :CBP (20%) and IrQ(ppy) 2 :CBP (10%) samples and the photoluminescence on the same sample excited at 405 nm.…”
Section: Current-voltage Characteristics: Electroluminescence Of Irq(mentioning
confidence: 99%