Charge injection imaging: operating techniques and performances characteristics

Burke, H. K.; Michon, G. J.

doi:10.1109/jssc.1976.1050686

Cited by 20 publications

(3 citation statements)

References 7 publications

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“…The Charge Injection Device (CID) was conceptualized by Hubert Burke and Gerald Michon at General Electric Company and evolved first into an imaging sensor in 1972 [22]. Like CCD, incident photons are converted to a proportional amount of charge, which is stored in the MOS capacitors of each pixel.…”

Section: Image Sensor: Cidmentioning

confidence: 99%

Video Cameras used in Beam Instrumentation -- an Overview

Walasek-Hoehne,

Hoehne,

Singh

2020

Preprint

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Section: Image Sensor: Cidmentioning

confidence: 99%

Video Cameras used in Beam Instrumentation -- an Overview

Walasek-Hoehne,

Hoehne,

Singh

2020

Preprint

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“…The CID is a solid-state imaging device that uses charge injection and intracell charge transfer to transduce image information (10). Each element in the two-dimensional sensor consists of a pair of metal-oxide semiconductor (MOS) capacitors which are reverse biased to collect and store photon-generated charge signals.…”

Section: Introductionmentioning

confidence: 99%

Continuum-source atomic-absorption spectroscopy with an echelle spectrometer adapted to a charge injection device

Hsiech¹,

Petrovic²,

Pardue³

1990

Anal. Chem.

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An instrumental system for continuum-source atomic absorption spectroscopy has been developed for simultaneous multielement determinations. The system consists of an electrothermal atomizer and a charge injection device adapted to an echelle spectrometer to achieve multiplex detection. A continuous 40-nm spectral range in the two-dimensional echelle spectrum was acquired simultaneously through the capability of the charge injection device to integrate signals in its MOS capacitors. Novel methods were developed to compute absorbances by "scanning" through all orders in the entire echelle spectrum or selecting absorption lines randomly. In the range 300-430 nm, characteristic concentrations (1% absorption) were 1.6, 2.6, 2.9, and 3.8 ng mL-1 respectively for Cu, Mn, and two Cr lines; these values are similar to those (1.3, 2.2, 1.2, and 3.6 ng mL-1) obtained for single-element detection with an image-dissector system.

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“…InAs charge injection devices (CIDs) are surface charge devices [2] similar to the charge coupled device (CCD) in that photogenerated charges are collected, integrated, and stored in the metalinsulator-semiconductor (MIS) capacitor. The most critical step in fabricating a CID is the deposition of thin insulator film on the semiconductor.…”

mentioning

confidence: 99%

High temperature InAs infrared detector based onmetal-insulator-semiconductor structure

Su¹,

Chang²,

Lee³

et al. 1995

Electron. Lett.

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f / ." 0 1 2 3 vo1tage.V Fig. 3 Current-voltage characteristics at different incident optical powers at resonance than intended. Intended base and collector dopings of 5 x 10" and 5 x respectively, would produce a punch-through voltage of -1OV. The operating voltage of 2V is, however, lower than the punch-through voltage.In conclusion, we have fabricated a GaAs-based resonant cavity enhanced HFT with a peak responsivity of llON W at IOpW incident optical power and a resonant wavelength of 929nm. This is in the transmission window of the GaAs substrate. The peak responsivity increases from 1 7 N W at 0.1pW incident optical power to 400N W at IOOpW.

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Charge injection imaging: operating techniques and performances characteristics

Cited by 20 publications

References 7 publications

Video Cameras used in Beam Instrumentation -- an Overview

Video Cameras used in Beam Instrumentation -- an Overview

Continuum-source atomic-absorption spectroscopy with an echelle spectrometer adapted to a charge injection device

High temperature InAs infrared detector based onmetal-insulator-semiconductor structure

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