High temperature InAs infrared detector based onmetal-insulator-semiconductor structure

Abstract

f / ." 0 1 2 3 vo1tage.V Fig. 3 Current-voltage characteristics at different incident optical powers at resonance than intended. Intended base and collector dopings of 5 x 10" and 5 x respectively, would produce a punch-through voltage of -1OV. The operating voltage of 2V is, however, lower than the punch-through voltage.In conclusion, we have fabricated a GaAs-based resonant cavity enhanced HFT with a peak responsivity of llON W at IOpW incident optical power and a resonant wavelength of 929nm. This is in the transmission window of the GaAs substrate. The peak responsivity increases from 1 7 N W at 0.1pW incident optical power to 400N W at IOOpW.