Charge injection process in organic field-effect transistors

Minari, Takeo; Miyadera, Tetsuhiko; Tsukagoshi, Kazuhito; Aoyagi, Yoshinobu; Ito, Hiromi

doi:10.1063/1.2759987

Cited by 150 publications

(124 citation statements)

References 20 publications

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“…The contact resistance in a transistor includes the resistance at the metal/organic interface (interface resistance, R int ) and the resistance at the access region (access resistance, R acs ), where charge carriers transport from the metal/semiconductor interface to the conducting channel. 20,21 In our work, not only were the electrode materials but also the crystalline and surface properties of the organic semiconductors nearly the same. 16 Meanwhile, the MoO 3 inserting layer between Au and C 8 -BTBT can greatly enhance the charge injection into the organic layer.…”

mentioning

confidence: 88%

Reducing contact resistance in ferroelectric organic transistors by buffering the semiconductor/dielectric interface

Sun

Yin

Wang

et al. 2015

Applied Physics Letters

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The reduction of contact resistance in ferroelectric organic field-effect transistors (Fe-OFETs) by buffering the interfacial polarization fluctuation was reported. An ultrathin poly(methyl methacrylate) layer was inserted between the ferroelectric polymer and organic semiconductor layers. The contact resistance was significantly reduced to 55 kΩ cm. By contrast, Fe-OFETs without buffering exhibited a significantly larger contact resistance of 260 kΩ cm. Results showed that such an enhanced charge injection was attributed to the buffering effect at the semiconductor/ferroelectric interface, which narrowed the trap distribution of the organic semiconductor in the contact region. The presented work provided an efficient method of lowering the contact resistance in Fe-OFETs, which is beneficial for the further development of Fe-OFETs.

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mentioning

confidence: 88%

Reducing contact resistance in ferroelectric organic transistors by buffering the semiconductor/dielectric interface

Sun

Yin

Wang

et al. 2015

Applied Physics Letters

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“…These materials are therefore suitable for both electron and hole injection into the CuPc layer which is actually observed as ambipolar transport. The question why F 4 TCNQ/gold exclusively reveals hole injection, although its work function is only slightly higher than that for gold, may be explained by the tendency of F 4 TCNQ to block electron injection [32], while the injection of holes is also improved. This assumption is confirmed by the fact that the contact resistance for holes is smallest with F 4 TCNQ/gold as injecting contact.…”

Section: Electron and Hole Transport In Neat Films Of Cupcmentioning

confidence: 99%

Bipolar transport in organic field-effect transistors: organic semiconductor blends versus contact modification

Opitz¹,

Kraus²,

Bronner³

et al. 2008

New J. Phys.

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Influence of gate dielectric on the ambipolar characteristics of solutionprocessed organic field-effect transistors J C Ribierre, S Ghosh, K Takaishi et al. Abstract. The achievement of bipolar transport is an important feature of organic semiconductors, both for a fundamental understanding of transport properties and for applications such as complementary electronic devices. We have investigated two routes towards organic field-effect transistors exhibiting bipolar transport characteristics. As a first step, ambipolar field-effect transistors are realized by mixtures of p-conducting copper-phthalocyanine (CuPc) and n-conducting buckminsterfullerene (C 60 ). As a second step, bipolar transport in copper-phthalocyanine is achieved by a modification of the gate dielectric in combination with a controlled variation of the electrode materials used for carrier injection. The analysis involves the determination of charge-carrier mobilities and contact resistances by a single curve analysis and by the transfer length method. Comparison of both types of samples indicates that percolation is a crucial feature in mixtures of both materials to achieve ambipolar carrier flow, whereas in neat films of one single material suitable contact modification allows for bipolar charge-carrier transport. In the latter case, the obtained electron and hole mobilities differ by less than one order of magnitude.

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“…Contact resistance is therefore an experimentally accessible measure of charge injection which quantifies the loss of channel voltage in an OTFT. Measurements have shown the contact resistance of OTFTs can be modified by doping [303], interlayers [304] and self-assembled monolayers [305] and more generally is influenced by film thickness [306], injection barrier [307] and electrode shape [308]. Such variations in contact resistance are predicted to have a substantial effect on the performance of OTFTs.…”

Section: Organic Thin-film Transistors (Otfts)mentioning

confidence: 99%

Simulating charge transport in organic semiconductors and devices: a review

Groves

2016

Rep. Prog. Phys.

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The full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. AbstractCharge transport simulation can be a valuable tool to better understand, optimise and design organic transistors (OTFTs), organic photovoltaics (OPVs), and light-emitting diodes (OLEDs). This review presents an overview of common charge transport and device models; namely drift-diffusion, master equation, mesoscale kinetic Monte Carlo and quantum chemical Monte Carlo, and a discussion of the relative merits of each. This is followed by a review of the application of these models as applied to charge transport in organic semiconductors and devices, highlighting in particular the insights made possible by modelling. The review concludes with an outlook for charge transport modelling in organic electronics.

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Charge injection process in organic field-effect transistors

Cited by 150 publications

References 20 publications

Reducing contact resistance in ferroelectric organic transistors by buffering the semiconductor/dielectric interface

Reducing contact resistance in ferroelectric organic transistors by buffering the semiconductor/dielectric interface

Bipolar transport in organic field-effect transistors: organic semiconductor blends versus contact modification

Simulating charge transport in organic semiconductors and devices: a review

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