2011
DOI: 10.1143/jjap.50.06gc01
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Charge Modeling for Metal Layer on Insulating Substrate

Abstract: A charging model for magnification variation in the observation of a metal pattern on an insulating substrate using a scanning electron microscope is proposed. To calculate the time evolution of charging, we replace electron trajectory with current. Negative charging of the metal layer is observed and is caused by the current from the anode, which is set above the sample, to the metal layer. The origin of the current is tertiary electrons produced by backscattered electrons colliding with the anode. By control… Show more

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Cited by 3 publications
(11 citation statements)
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“…The build‐up of negative charge in the sample is seen as a systematic shrinkage effect, manifesting itself as a demagnified image (Okai et al ., ). Positive sample charging would result in an overmagnified image, evident as an ‘expansion effect’.…”
Section: Resultsmentioning
confidence: 97%
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“…The build‐up of negative charge in the sample is seen as a systematic shrinkage effect, manifesting itself as a demagnified image (Okai et al ., ). Positive sample charging would result in an overmagnified image, evident as an ‘expansion effect’.…”
Section: Resultsmentioning
confidence: 97%
“…The primary electrons and emitted SEs are deflected causing magnification variations, image drift and abnormal contrast (Cazaux, ; Jbara et al ., ; Fakhfakh et al ., ; Okai et al ., ; Okai & Sohda, ). Trapped primary electrons contribute to negative charging, whereas the emission of SEs and BSEs give rise to positive charging of the sample (Cazaux, ).…”
Section: Charging Effectmentioning
confidence: 97%
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“…Since these phenomena degrade the accuracy of SEM observation, they have been extensively studied by experiment and simulation. [1][2][3][4][5][6][7][8][9] Image-contrast variation is caused by a change in the efficiency of detecting emitted electrons during observation owing to the sample charging. It has been observed when a metal-insulator mixed sample [1][2][3] or SiO 2 lines on silicon 4,5) is inspected.…”
Section: Introductionmentioning
confidence: 99%