Charge Pumping Measurements of Radiation-Induced Interface-Trap Density in Floating-Body SOI FinFETs

Zhang, E. X.; Fleetwood, D.M.; Duan, Guo Xing; Zhang, C. X.; Francis, S.A.; Schrimpf, R.D.

doi:10.1109/tns.2012.2222443

Cited by 13 publications

(6 citation statements)

References 23 publications

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“…In this study, the TFETs are floating-body SOI devices without body contacts, so the feasibility of change pumping measurements to monitor the quality of the gate oxide/Si interface should be evaluated first [16]. In TFETs, the source and drain are of opposite doping types, hence they can provide the electrons and holes involved in the recombination process at the base of the charge pumping measurements.…”

Section: Device and Experiments Detailsmentioning

confidence: 99%

Total Ionizing Dose Effects in Si-Based Tunnel FETs

Ding

Gnani

Gerardin

et al. 2014

IEEE Trans. Nucl. Sci.

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Total ionizing dose (TID) effects in Si-based tunnel fi- nite element transfers (FETs) were investigated for the first time. Under 10-keV X-ray irradiation environment, along with the in- crease in total dose, a shift of the transfer characteristics and an increase in the interface trap density could be observed. After ir- radiation at 1 Mrad (SiO2) (and higher dose), the threshold voltage and the band-to-band tunneling conduction were only modestly affected, despite the thick buried oxide (140 nm). In contrast, under the same bias and irradiation environment, a FDSOI nMOSFET fabricated with a similar process presented a more severe degradation, suggesting the robustness of TFETs against TID effects. The underlying mechanism was explored through device simulation and ascribed to be due to the peculiarity of the doping structures of TFETs

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Section: Device and Experiments Detailsmentioning

confidence: 99%

Total Ionizing Dose Effects in Si-Based Tunnel FETs

Ding

Gnani

Gerardin

et al. 2014

IEEE Trans. Nucl. Sci.

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“…Several works [22], [25]- [27] have reported that the buildup of radiation-induced interface traps. E. X. Zhang et al [26] have estimated radiation-induced interface trap density (N it ) from the charge pumping data but the energy level distribution of interface traps in his work is not involved. S. Bonaldo et al [27] have inspected the spatial distribution of interface traps in irradiated pMOSFETs and found a high density of interface traps in the lateral source/drain extension regions by static DC and charge pumping measurements.…”

Section: Introductionmentioning

confidence: 99%

Effect of Radiation on Interface Traps of SOI NMOSFETs by the Direct-Current Current-Voltage Technique

et al. 2019

IEEE Access

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This paper investigates the effect of total ionizing dose radiation on back-gate interface traps in SOI NMOSFETs. The concentration and energy distribution of interface traps at Si/SiO 2 back-gate interface of SOI NMOSFETs during irradiation are studied by the direct-current current-voltage technique. When transistors are subjected to radiation, DCIV bulk current increases. The calculated results suggest that the interface trap density increases and its equivalent energy level is far away from the midgap with irradiation dose increasing, which can be explained by the energy distribution of interface traps. The interface trap energy density D IT (E IT ) as a function of the energy level E IT has been obtained by the least square optimization and shows the typical ''U-shape'' distribution. In detail, the rising humps at equivalent energy level in D IT (E IT ) curves are due to Si-H bonds that are broken down after irradiation, which corresponds to the increasing trap density. Moreover, it is found that the energy level of interface traps is redistributed after irradiation. The peak of humps in D IT (E IT ) curves occurs at the farther energy level with the increase of dose, which is similar to the equivalent energy level. It might arise from the shallow energy level of interface traps induced by radiation.INDEX TERMS SOI, interface traps, radiation, energy distribution.

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“…Similar parameters can be found in previous literatures and their reasonability has been verified [22][23][24]. In this simulation, the oxide trap density (N ot ) is varied from 1 × 10 16 cm −3 to 1 × 10 17 cm −3 and the interface trap density (N it ) is changed from 1 × 10 10 cm −2 to 8 × 10 10 cm −2 ; these are set according to the previous literature [8]. These values are also consistent with our theoretical calculations [17].…”

Section: Discussionmentioning

confidence: 67%

“…In order to further study the mechanisms of TID-induced degradation, the separation of the interface trap charge from the trap charge effectively is essential. Several techniques [8][9][10][11][12] have been proposed for the determination of interface trap concentration. As the feature size of transistors have scaled to deep subhalf-micron, conventional methods such as the capacitor-voltage (C-V) and mid-gap voltage methods have been found to be not suitable [13].…”

Section: Introductionmentioning

confidence: 99%

Applications of Direct-Current Current–Voltage Method to Total Ionizing Dose Radiation Characterization in SOI NMOSFETs with Different Process Conditions

Zeng

et al. 2021

Electronics

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As a promising candidate in space radiation hardened applications, silicon-on-insulator (SOI) devices face the severe problem of total ionizing dose (TID) radiation because of the thick buried oxide (BOX) layer. The direct-current current–voltage (DCIV) method was applied for studying TID radiation of SOI metal–oxide–semiconductor field–effect transistors (MOSFETs) with different manufacture processes. It is found that the peak of high-voltage well (PX) devices shows a larger left-shift and a slower multitude increase along with radiation dose, compared with that of low-voltage well (PV) devices. It is illustrated that the high P-type impurity concentration near back interface makes it more difficult to break up silicon hydrogen bonds, which gives the PX devices superiority in resisting the build-up of interface traps. The study results indicate that increasing doping concentration of the body region near the back-gate interface might be an alternative radiation hardening technique of SOI MOSFET devices to avoid the parasitic back transistors’ leakage.

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Charge Pumping Measurements of Radiation-Induced Interface-Trap Density in Floating-Body SOI FinFETs

Cited by 13 publications

References 23 publications

Total Ionizing Dose Effects in Si-Based Tunnel FETs

Total Ionizing Dose Effects in Si-Based Tunnel FETs

Effect of Radiation on Interface Traps of SOI NMOSFETs by the Direct-Current Current-Voltage Technique

Applications of Direct-Current Current–Voltage Method to Total Ionizing Dose Radiation Characterization in SOI NMOSFETs with Different Process Conditions

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