Charge Reconfiguration in Isolated Quantum Dot Arrays

Bayer, Johannes C.; Wagner, Timo; Rugeramigabo, Eddy P.; Haug, Rolf J.

doi:10.1002/andp.201800393

Cited by 9 publications

(9 citation statements)

References 57 publications

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“…For small systems this can be achieved based on that the long-range electron-electron interaction strength is larger than the reservoir temperature. For a larger number of sites with only few charges, control over the tunnel coupling to the reservoirs can allow for first loading the desired number of charges and then isolating the QD array by raising the respective tunnel barriers [34,35].…”

Section: Relevant Experimental Techniquesmentioning

confidence: 99%

Long-range electron-electron interactions in quantum dot systems and applications in quantum chemistry

Knörzer,

van Diepen,

Hsiao

et al. 2022

Preprint

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Long-range interactions play a key role in several phenomena of quantum physics and chemistry. To study these phenomena, analog quantum simulators provide an appealing alternative to classical numerical methods. Gate-defined quantum dots have been established as a platform for quantum simulation, but for those experiments the effect of long-range interactions between the electrons did not play a crucial role. Here we present the first detailed experimental characterization of long-range electron-electron interactions in an array of gatedefined semiconductor quantum dots. We demonstrate significant interaction strength among electrons that are separated by up to four sites, and show that our theoretical prediction of the screening effects matches well the experimental results. Based on these findings, we investigate how long-range interactions in quantum-dot arrays may be utilized for analog simulations of artificial quantum matter. We numerically show that about ten quantum dots are sufficient to observe binding for a one-dimensional H2-like molecule. These combined experimental and theoretical results pave the way for future quantum simulations with quantum dot arrays and benchmarks of numerical methods in quantum chemistry.

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Section: Relevant Experimental Techniquesmentioning

confidence: 99%

Long-range electron-electron interactions in quantum dot systems and applications in quantum chemistry

Knörzer,

van Diepen,

Hsiao

et al. 2022

Preprint

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“…We refer to this reservoir‐independent quantum dot operation as an isolated mode of operation. [ 83,86 ]…”

Section: Electron Spin Qubits In Silicon Quantum Dotsmentioning

confidence: 99%

Materials for Silicon Quantum Dots and their Impact on Electron Spin Qubits

Saraiva

Lim

Yang

et al. 2021

Adv Funct Materials

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Quantum computers have the potential to efficiently solve problems in logistics, drug and material design, finance, and cybersecurity. However, millions of qubits will be necessary for correcting inevitable errors in quantum operations. In this scenario, electron spins in gate‐defined silicon quantum dots are strong contenders for encoding qubits, leveraging the microelectronics industry know‐how for fabricating densely populated chips with nanoscale electrodes. The sophisticated material combinations used in commercially manufactured transistors, however, will have a very different impact on the fragile qubits. Here some key properties of the materials that have a direct impact on qubit performance and variability are reviewed.

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“…The epitaxial QDs used in quantum device applications are typically covered by a semiconductor capping layer (wider bandgap than that of the QD material) that is several tens of nanometers in thickness, preventing adverse influences from the environment and thus enabling stable optical properties, including a near-unity radiative efficiency and suppression of blinking effects that are common to many colloidal QDs [24]. However, a negative consequence of this thick capping layer is that it is highly nontrivial to obtain location information of such embedded emitters by surface imaging techniques.…”

Section: Scanning-based Positioning Techniquesmentioning

confidence: 99%

Nanoscale positioning approaches for integrating single epitaxial quantum emitters with photonic nanostructures

Liu,

Srinivasan,

Liu

2021

Preprint

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Deterministically integrating single solid-state quantum emitters with photonic nanostructures serves as a key enabling resource in the context of photonic quantum technology. Due to the random spatial location of many widely-used solid-state quantum emitters, a number of positoning approaches for locating the quantum emitters before nanofabrication have been explored in the last decade. Here, we review the working principles of several nanoscale positioning methods and the most recent progress in this field, covering techniques including atomic force microscopy, scanning electron microscopy, confocal microscopy with in situ lithography, and wide-field fluorescence imaging. A selection of representative device demonstrations with high-performance is presented, including high-quality single-photon sources, bright entangled-photon pairs, strongly-coupled cavity QED systems, and other emerging applications. The challenges in applying positioning techniques to different material systems and opportunities for using these approaches for realizing large-scale quantum photonic devices are discussed.

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Charge Reconfiguration in Isolated Quantum Dot Arrays

Cited by 9 publications

References 57 publications

Long-range electron-electron interactions in quantum dot systems and applications in quantum chemistry

Long-range electron-electron interactions in quantum dot systems and applications in quantum chemistry

Materials for Silicon Quantum Dots and their Impact on Electron Spin Qubits

Nanoscale positioning approaches for integrating single epitaxial quantum emitters with photonic nanostructures

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