2008
DOI: 10.1109/tcad.2008.2003297
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Charge Recycling in Power-Gated CMOS Circuits

Abstract: Abstract-Design of a suitable power gating (e.g., multithreshold CMOS or super cutoff CMOS) structure is an important and challenging task in sub-90nm VLSI circuits where leakage currents are significant. In designs where the mode transitions are frequent, a significant amount of energy is consumed to turn on or off the power gating structure. It is thus desirable to develop a power gating solution that minimizes the energy consumed during mode transitions. This paper presents such a solution by recycling char… Show more

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Cited by 28 publications
(13 citation statements)
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“…The result is a much more aggressive reduction in voltage across the power gated logic but also has three advantages over single rail clamping [13]. Firstly the charge that is stored in the V V dd supply rail is recycled to charge up the V V ss supply rail in the sleep mode [17] achieving greater reduction in supply voltage in the same time frame at lower energy cost to single virtual rail clamping. This is shown in Fig.…”
Section: Wake-up Energy Cost Of Different Power Gating Approachesmentioning
confidence: 99%
“…The result is a much more aggressive reduction in voltage across the power gated logic but also has three advantages over single rail clamping [13]. Firstly the charge that is stored in the V V dd supply rail is recycled to charge up the V V ss supply rail in the sleep mode [17] achieving greater reduction in supply voltage in the same time frame at lower energy cost to single virtual rail clamping. This is shown in Fig.…”
Section: Wake-up Energy Cost Of Different Power Gating Approachesmentioning
confidence: 99%
“…During the sleep period, when the sleep transistor is OFF, if the circuit block is large enough, then the VVSS node and all internal nodes in the circuit will charge to a high voltage level [8]. This is due to the higher leakage of the circuit block compared to that of the OFF sleep transistor, which eventually charges up all the internal nodes in the circuit block including the VVSS node.…”
Section: Wakeup Latency and Leakage: Sizing Ms1mentioning
confidence: 99%
“…MTCMOS circuits suffer from some drawbacks such as long wakeup latency, large amount of rush-thru current, and wasteful energy usage during mode transition [7]. In addition, due to data loss in the sleep mode, MTCMOS circuits usually use a data retention strategy to restore the pre-sleep state which they cannot afford to lose.…”
Section: Introductionmentioning
confidence: 99%