Charge stability in LPCVD silicon nitride for surface passivation of silicon solar cells

Ren, Yongling; Nursam, Natalita Maulani; Wang, Da; Weber, Klaus

doi:10.1109/pvsc.2010.5614143

Cited by 5 publications

(5 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This can be appreciated in Figures 5(a) Hydrogen release from the layers could lead to reduction of negative charges at the silicon/dielectric interface for these O3-grown Al2O3 layers. A similar logarithmic dependence has been encountered for example in bias temperature instabilities (BTI) [54,55] or when studying detrapping characteristics of negatively charged Si3N4 layers for silicon solar cells passivation, exposed to similar temperatures in the range of 100ºC to 200ºC [56]. layers has been observed.…”

Section: Thermal Stability Of Electrical Characteristicssupporting

confidence: 63%

Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric

Rafı́

Pellegrini

Fadeyev

et al. 2016

Solid-State Electronics

View full text Add to dashboard Cite

The radiation hardness and thermal stability of the electrical characteristics of atomic layer deposited Al2O3 layers to be used as passivation films for silicon radiation detectors with slim edges are investigated. To directly measure the interface charge and to evaluate its change with the ionizing dose, metal-oxide-silicon (MOS) capacitors implementing differently processed Al2O3 layers were fabricated on p-type silicon substrates. Qualitatively similar results are obtained for degradation of capacitance-voltage and current-voltage characteristics under gamma and proton irradiations up to equivalent doses of 30 Mrad and 21.07 Mrad, respectively. While similar negative charge densities are initially extracted for all non-irradiated capacitors, superior radiation hardness is obtained for MOS structures with alumina layers grown with H2O instead of O3 as oxidant precursor. Competing effects between radiation-induced positive charge trapping and hydrogen release from the H2Ogrown Al2O3 layers may explain their higher radiation resistance. Finally, irradiated and nonirradiated MOS capacitors with differently processed Al2O3 layers have been subjected to thermal treatments in air at temperatures ranging between 100ºC and 200ºC and the thermal stability of their electrical characteristics has been evaluated. Partial recovery of the gamma-induced degradation has been noticed for O3-grown MOS structures. This can be explained by a trapped holes emission process, for which an activation energy of 1.38 ± 0.15 eV has been extracted.

show abstract

Section: Thermal Stability Of Electrical Characteristicssupporting

confidence: 63%

Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric

Rafı́

Pellegrini

Fadeyev

et al. 2016

Solid-State Electronics

View full text Add to dashboard Cite

show abstract

“…The C-V curve of the flat capacitor has typical MOS characteristics. Assuming that there are few fixed charges in the ATA film in the flat MOS capacitor, the flat band voltage (V FB ) of −0.87 V should be obtained, which comes from the work function difference between Al and Si (φ MS = 0.87 eV [37]). However, the V FB from Figure 4a was estimated to be −2.05 V, suggesting that there are fixed charges in the ATA film.…”

Section: Resultsmentioning

confidence: 99%

Fabrication of Silicon Nanowire Metal-Oxide-Semiconductor Capacitors with Al2O3/TiO2/Al2O3 Stacked Dielectric Films for the Application to Energy Storage Devices

et al. 2021

View full text Add to dashboard Cite

Silicon nanowire (SiNW) metal-oxide-semiconductor (MOS) capacitors with Al2O3/TiO2/Al2O3 (ATA) stacked dielectric films were fabricated by metal-assisted chemical etching (MACE) and atomic layer deposition (ALD). High-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) images revealed that SiNWs were conformally coated with ATA although the cross-sectional shapes of MACE-SiNWs were non-uniform and sharp spikes can be seen locally. The dielectric capacitance density of 5.9 μF/cm2 at V = −4 V of the perfect accumulation region was achieved due to the combination of the large surface area of the SiNW array and the high dielectric constant of ATA. The capacitance changed exponentially with the voltage at V < −4.3 V and the capacitance of 84 μF/cm2 was successfully achieved at V = −10 V. It was revealed that not only 3D structure and high-k material but also local nanostructure of SiNWs and stacked dielectric layers could contribute to the considerable high capacitance.

show abstract

“…The calculation in Equation (2), however, assumes that all charge is at the surface of the dielectric. In SiO 2 /SiN double layers it has been suggested that charge can migrate to the SiO 2 /SiN interface when annealed [20], [21], therefore the charge density quoted is an under-estimation of the actual value. Charge removal can be better assessed by its effect on SRV.…”

Section: Solid State Phenomena Vols 205-206mentioning

confidence: 99%

Electric Field Effect Surface Passivation for Silicon Solar Cells

Reichel

Hermle

Wilshaw

2013

SSP

View full text Add to dashboard Cite

Effective reduction of front surface carrier recombination is essential for high efficiency silicon solar cells. Dielectric films are normally used to achieve such reduction. They provide a) an efficient passivation of surface recombination and b) an effective anti-reflection layer. The conditions that produce an effective anti-reflection coating are not necessarily the same for efficient passivation, hence both functions are difficult to achieve simultaneously and expensive processing steps are normally required. This can be overcome by enhancing the passivation properties of an anti-reflective film using the electric field effect. Here, we demonstrate that thermally grown silicon dioxide is an efficient passivation layer when chemically treated and electrically charged, and it is stable over a period of ten months. Double layers of SiO2 and SiN also provided stable and efficient passivation for a period of a year when the sample is submitted to a post-charge anneal. Surface recombination velocity upper limits of 9 cm/s and 19 cm/s were inferred for single and double layers respectively on n-type, 5 Ωcm, Cz-Si.

show abstract

Charge stability in LPCVD silicon nitride for surface passivation of silicon solar cells

Cited by 5 publications

References 8 publications

Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric

Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric

Fabrication of Silicon Nanowire Metal-Oxide-Semiconductor Capacitors with Al2O3/TiO2/Al2O3 Stacked Dielectric Films for the Application to Energy Storage Devices

Electric Field Effect Surface Passivation for Silicon Solar Cells

Contact Info

Product

Resources

About