Charge state dynamics and optically detected electron spin resonance contrast of shallow nitrogen-vacancy centers in diamond

Yuan, Zhiyang; Fitzpatrick, Mattias; Rodgers, Lila V. H.; Sangtawesin, Sorawis; Srinivasan, Srikanth; Leon, Nathalie P. de

doi:10.1103/physrevresearch.2.033263

Cited by 35 publications

(23 citation statements)

References 41 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The leakage of the NV 0 FL component in the NV – spectral region can affect the ODMR contrast. − For NV – centers, the contrast is defined as C s = ( I off – I on )/ I off , where I off and I on are the collected FL intensities with microwaves off- and on-resonance, respectively. If the intensity contains an NV 0 -related component I 0 , then the contrast C s must be scaled by a factor I off /( I off + I 0 ).…”

Section: Discussionmentioning

confidence: 99%

Long-Lived Ensembles of Shallow NV^– Centers in Flat and Nanostructured Diamonds by Photoconversion

Gorrini

Dorigoni

Olivares-Postigo

et al. 2021

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Shallow, negatively charged nitrogen-vacancy centers (NV – ) in diamond have been proposed for high-sensitivity magnetometry and spin-polarization transfer applications. However, surface effects tend to favor and stabilize the less useful neutral form, the NV 0 centers. Here, we report the effects of green laser irradiation on ensembles of nanometer-shallow NV centers in flat and nanostructured diamond surfaces as a function of laser power in a range not previously explored (up to 150 mW/μm 2 ). Fluorescence spectroscopy, optically detected magnetic resonance (ODMR), and charge-photoconversion detection are applied to characterize the properties and dynamics of NV – and NV 0 centers. We demonstrate that high laser power strongly promotes photoconversion of NV 0 to NV – centers. Surprisingly, the excess NV – population is stable over a timescale of 100 ms after switching off the laser, resulting in long-lived enrichment of shallow NV – . The beneficial effect of photoconversion is less marked in nanostructured samples. Our results are important to inform the design of samples and experimental procedures for applications relying on ensembles of shallow NV – centers in diamond.

show abstract

Section: Discussionmentioning

confidence: 99%

Long-Lived Ensembles of Shallow NV^– Centers in Flat and Nanostructured Diamonds by Photoconversion

Gorrini

Dorigoni

Olivares-Postigo

et al. 2021

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

show abstract

“…Although NV centers in the bulk can have exceptional properties, in general the spin T 1 and T 2 [55,60,74,75], charge state stability [76,77], and ODMR contrast [77] have been observed to degrade significantly near the diamond surface (Fig. 4a,d).…”

Section: Surfacesmentioning

confidence: 99%

“…Additionally, the charge stability of shallow NV centers degrades with proximity to the surface [76,77], reducing ESR contrast [77] and necessitating experimental checks of the charge state to enhance readout fidelity [76,80]. The desire to control and stabilize the charge state of shallow NV centers has motivated considerable efforts to control the surface termination of diamond and to understand its impact on defect charge states [65,81,82].…”

Section: Surfacesmentioning

confidence: 99%

Materials challenges for quantum technologies based on color centers in diamond

Rodgers¹,

Hughes²,

Xie³

et al. 2021

Preprint

Self Cite

View full text Add to dashboard Cite

Emerging quantum technologies require precise control over quantum systems of increasing complexity. Defects in diamond, particularly the negatively charged nitrogen-vacancy (NV) center, are a promising platform with the potential to enable technologies ranging from ultra-sensitive nanoscale quantum sensors, to quantum repeaters for long distance quantum networks, to simulators of complex dynamical processes in many-body quantum systems, to scalable quantum computers. While these advances are due in large part to the distinct material properties of diamond, the uniqueness of this material also presents difficulties, and there is a growing need for novel materials science techniques for characterization, growth, defect control, and fabrication dedicated to realizing quantum applications with diamond. In this review

show abstract

“…In such nanofabricated devices, inevitably there will be defects close to surfaces or sidewalls. This can change, or even deteriorate a defect's optical properties, and make the bright (photoluminescent) charge state unstable as different finite-size effects come into play within a nanostructure [5,24,25]. In the present work, we have investigated the effects of nanostructuring on structural, electronic, spin and optical properties of defects using density functional the-ory (DFT).…”

Section: Introductionmentioning

confidence: 99%

Site-dependent properties of quantum emitters in nanostructured silicon carbide

Joshi,

Dev

2021

Preprint

View full text Add to dashboard Cite

Deep defects in silicon carbide (SiC) possess atom-like electronic, spin and optical properties, making them ideal for quantum-computing and -sensing applications. In these applications, deep defects are often placed within fabricated nanostructures that modify defect properties due to surface and quantum confinement effects. Thus far, theoretical studies exploring deep defects in SiC have ignored these effects. Using density functional theory, this work demonstrates site-dependence of properties of bright, negatively-charged silicon monovacancies within a SiC nanowire. It is shown that the optical properties of defects depend strongly on the hybridization of the defect states with the surface states and on the structural changes allowed by proximity to the surfaces. Additionally, the analysis of the first principles results indicates that the charge-state conversion and/or migration to thermodynamically-favorable undercoordinated surface sites can deteriorate deep-defect properties. These results illustrate the importance of considering how finite-size effects tune defect properties, and of creating mitigating protocols to ensure a defect's charge-state stability within nanostructured hosts.

show abstract

Charge state dynamics and optically detected electron spin resonance contrast of shallow nitrogen-vacancy centers in diamond

Cited by 35 publications

References 41 publications

Long-Lived Ensembles of Shallow NV^– Centers in Flat and Nanostructured Diamonds by Photoconversion

Long-Lived Ensembles of Shallow NV^– Centers in Flat and Nanostructured Diamonds by Photoconversion

Materials challenges for quantum technologies based on color centers in diamond

Site-dependent properties of quantum emitters in nanostructured silicon carbide

Contact Info

Product

Resources

About

Charge state dynamics and optically detected electron spin resonance contrast of shallow nitrogen-vacancy centers in diamond

Cited by 35 publications

References 41 publications

Long-Lived Ensembles of Shallow NV– Centers in Flat and Nanostructured Diamonds by Photoconversion

Long-Lived Ensembles of Shallow NV– Centers in Flat and Nanostructured Diamonds by Photoconversion

Materials challenges for quantum technologies based on color centers in diamond

Site-dependent properties of quantum emitters in nanostructured silicon carbide

Contact Info

Product

Resources

About

Long-Lived Ensembles of Shallow NV^– Centers in Flat and Nanostructured Diamonds by Photoconversion

Long-Lived Ensembles of Shallow NV^– Centers in Flat and Nanostructured Diamonds by Photoconversion